A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots
Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, Mo...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
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2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/107098 http://hdl.handle.net/10220/25340 |
| _version_ | 1811683635375374336 |
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| author | Huang, Ying Zhang, Xiao Lai, Zhuangchai Liu, Zhengdong Tan, Chaoliang Li, Bing Zhao, Meiting Xie, Linghai Huang, Wei Zhang, Hua |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Huang, Ying Zhang, Xiao Lai, Zhuangchai Liu, Zhengdong Tan, Chaoliang Li, Bing Zhao, Meiting Xie, Linghai Huang, Wei Zhang, Hua |
| author_sort | Huang, Ying |
| collection | NTU |
| description | Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine. |
| first_indexed | 2024-10-01T04:15:52Z |
| format | Journal Article |
| id | ntu-10356/107098 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:15:52Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1070982021-01-10T10:41:32Z A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots Huang, Ying Zhang, Xiao Lai, Zhuangchai Liu, Zhengdong Tan, Chaoliang Li, Bing Zhao, Meiting Xie, Linghai Huang, Wei Zhang, Hua School of Materials Science & Engineering Energy Research Institute @ NTU (ERI@N) DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2, WS2, ReS2, TaS2, MoSe2 and WSe2) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10 nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2, WS2, or NbSe2, mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine. 2015-04-08T09:06:21Z 2019-12-06T22:24:40Z 2015-04-08T09:06:21Z 2019-12-06T22:24:40Z 2015 2015 Journal Article Zhang, X., Lai, Z., Liu, Z., Tan, C., Huang, Y., Li, B., et al. (2015). A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots. Angewandte chemie International edition, 54(18), 5425-5428. 1521-3773 https://hdl.handle.net/10356/107098 http://hdl.handle.net/10220/25340 10.1002/anie.201501071 en Angewandte chemie International edition © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry Huang, Ying Zhang, Xiao Lai, Zhuangchai Liu, Zhengdong Tan, Chaoliang Li, Bing Zhao, Meiting Xie, Linghai Huang, Wei Zhang, Hua A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title | A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title_full | A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title_fullStr | A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title_full_unstemmed | A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title_short | A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots |
| title_sort | facile and universal top down method for preparation of monodisperse transition metal dichalcogenide nanodots |
| topic | DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry |
| url | https://hdl.handle.net/10356/107098 http://hdl.handle.net/10220/25340 |
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