Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione
Increasing the length of N-heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π-conjugated N-heteroquinone 6,10,17,21-tetra-((triisopropylsilyl)ethynyl)-5,7,9,11,16,18,20,22-octaazanonac...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/107250 http://hdl.handle.net/10220/25422 |
| _version_ | 1826116099862691840 |
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| author | Wang, Chengyuan Zhang, Jing Long, Guankui Aratani, Naoki Yamada, Hiroko Zhao, Yang Zhang, Qichun |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Wang, Chengyuan Zhang, Jing Long, Guankui Aratani, Naoki Yamada, Hiroko Zhao, Yang Zhang, Qichun |
| author_sort | Wang, Chengyuan |
| collection | NTU |
| description | Increasing the length of N-heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π-conjugated N-heteroquinone 6,10,17,21-tetra-((triisopropylsilyl)ethynyl)-5,7,9,11,16,18,20,22-octaazanonacene-8,19-dione (OANQ) has been synthesized and characterized. The as-prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air-stable n-type field-effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2 cm2 V−1 s−1 under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility. |
| first_indexed | 2024-10-01T04:05:33Z |
| format | Journal Article |
| id | ntu-10356/107250 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:05:33Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1072502020-06-01T10:26:39Z Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione Wang, Chengyuan Zhang, Jing Long, Guankui Aratani, Naoki Yamada, Hiroko Zhao, Yang Zhang, Qichun School of Materials Science & Engineering School of Physical and Mathematical Sciences DRNTU::Engineering::Materials::Composite materials Increasing the length of N-heteroacenes or their analogues is highly desirable because such materials could have great potential applications in organic electronics. In this report, the large π-conjugated N-heteroquinone 6,10,17,21-tetra-((triisopropylsilyl)ethynyl)-5,7,9,11,16,18,20,22-octaazanonacene-8,19-dione (OANQ) has been synthesized and characterized. The as-prepared OANQ shows high stability under ambient conditions and has a particularly low LUMO level, which leads to it being a promising candidate for air-stable n-type field-effect transistors (FETs). In fact, FET devices based on OANQ single crystals have been fabricated and an electron mobility of up to 0.2 cm2 V−1 s−1 under ambient conditions is reported. More importantly, no obvious degradation was observed even after one month. Theoretical calculations based on the single crystal are consistent with the measured mobility. 2015-04-17T03:20:42Z 2019-12-06T22:27:22Z 2015-04-17T03:20:42Z 2019-12-06T22:27:22Z 2015 2015 Journal Article Wang, C., Zhang, J., Long, G., Aratani, N., Yamada, H., Zhao, Y., et al. (2015). Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione. Angewandte chemie-International edition, 54(21), 6292-6296. 1433-7851 https://hdl.handle.net/10356/107250 http://hdl.handle.net/10220/25422 10.1002/anie.201500972 en Angewandte chemie-International edition © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Materials::Composite materials Wang, Chengyuan Zhang, Jing Long, Guankui Aratani, Naoki Yamada, Hiroko Zhao, Yang Zhang, Qichun Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title | Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title_full | Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title_fullStr | Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title_full_unstemmed | Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title_short | Synthesis, structure, and air-stable N-type field-effect transistor behaviors of functionalized octaazanonacene-8,19-dione |
| title_sort | synthesis structure and air stable n type field effect transistor behaviors of functionalized octaazanonacene 8 19 dione |
| topic | DRNTU::Engineering::Materials::Composite materials |
| url | https://hdl.handle.net/10356/107250 http://hdl.handle.net/10220/25422 |
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