Band engineering for novel two-dimensional atomic layers
The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the m...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/107321 http://hdl.handle.net/10220/25601 |
| _version_ | 1826125257224749056 |
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| author | Zeng, Qingsheng Wang, Hong Fu, Wei Gong, Yongji Zhou, Wu Ajayan, Pulickel M. Lou, Jun Liu, Zheng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zeng, Qingsheng Wang, Hong Fu, Wei Gong, Yongji Zhou, Wu Ajayan, Pulickel M. Lou, Jun Liu, Zheng |
| author_sort | Zeng, Qingsheng |
| collection | NTU |
| description | The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the modification of 2D materials, emphasizing their electronic structures. In this review, the possibilities of altering the band structures are discussed via three different approches: (1) alloying 2D materials, so called ternary 2D materials, such as hexagonal carbonized boron nitrides (h-BCN) and transition metal dichalcogenides (TMDs) ternary materials; (2) stacking 2D materials vertically, which results in 2D heterostructures named van der Waals (vdW) solids (using hexagonal boron nitrides (h-BN)/graphene and TMDs stacking as examples), and growing lateral TMDs heterostructrues; (3) controlling the thickness of 2D materials, that is, the number of layers. The electronic properties of some 2D materials are very sensitive to the thickness, such as in TMDs and black phosphorus (BP). The variations of band structures and the resulting physical properties are systematically discussed. |
| first_indexed | 2024-10-01T06:33:42Z |
| format | Journal Article |
| id | ntu-10356/107321 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:33:42Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1073212020-06-01T10:01:35Z Band engineering for novel two-dimensional atomic layers Zeng, Qingsheng Wang, Hong Fu, Wei Gong, Yongji Zhou, Wu Ajayan, Pulickel M. Lou, Jun Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science & Engineering Centre for Micro-/Nano-electronics (NOVITAS) DRNTU::Engineering::Materials The discovery of graphene has sparked much interest in science and lead to the development of an ample variety of novel two-dimensional (2D) materials. With increasing research interest in the field of 2D materials in recent years, the researchers have shifted their focus from the synthesis to the modification of 2D materials, emphasizing their electronic structures. In this review, the possibilities of altering the band structures are discussed via three different approches: (1) alloying 2D materials, so called ternary 2D materials, such as hexagonal carbonized boron nitrides (h-BCN) and transition metal dichalcogenides (TMDs) ternary materials; (2) stacking 2D materials vertically, which results in 2D heterostructures named van der Waals (vdW) solids (using hexagonal boron nitrides (h-BN)/graphene and TMDs stacking as examples), and growing lateral TMDs heterostructrues; (3) controlling the thickness of 2D materials, that is, the number of layers. The electronic properties of some 2D materials are very sensitive to the thickness, such as in TMDs and black phosphorus (BP). The variations of band structures and the resulting physical properties are systematically discussed. 2015-05-19T08:42:18Z 2019-12-06T22:28:52Z 2015-05-19T08:42:18Z 2019-12-06T22:28:52Z 2015 2015 Journal Article Zeng, Q., Wang, H., Fu, W., Gong, Y., Zhou, W., Ajayan, P. M., et al. (2015). Band engineering for novel two-dimensional atomic layers. Small, 11(16), 1868-1884. 1613-6810 https://hdl.handle.net/10356/107321 http://hdl.handle.net/10220/25601 10.1002/smll.201402380 en Small © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | DRNTU::Engineering::Materials Zeng, Qingsheng Wang, Hong Fu, Wei Gong, Yongji Zhou, Wu Ajayan, Pulickel M. Lou, Jun Liu, Zheng Band engineering for novel two-dimensional atomic layers |
| title | Band engineering for novel two-dimensional atomic layers |
| title_full | Band engineering for novel two-dimensional atomic layers |
| title_fullStr | Band engineering for novel two-dimensional atomic layers |
| title_full_unstemmed | Band engineering for novel two-dimensional atomic layers |
| title_short | Band engineering for novel two-dimensional atomic layers |
| title_sort | band engineering for novel two dimensional atomic layers |
| topic | DRNTU::Engineering::Materials |
| url | https://hdl.handle.net/10356/107321 http://hdl.handle.net/10220/25601 |
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