Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation
The energy band alignment between HfAlO and GaN (0001) was characterized using high-resolution x-ray photoelectron spectroscopy (XPS). The HfAlO was deposited using a metal-organic chemical vapor deposition (MOCVD) gate cluster. A valence band offset of 0.38 eV and a conduction band offset of 2.2...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/107402 http://hdl.handle.net/10220/25476 http://dx.doi.org/10.1016/j.jallcom.2015.02.139 |
| _version_ | 1811692307328532480 |
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| author | Liu, Xinke Liu, Zhihong Pannirselvam, Somasuntharam Pan, Jishen Liu, Wei Jia, Fang Lu, Youming Liu, Chang Yu, Wenjie He, Jin Tan, Leng Seow |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liu, Xinke Liu, Zhihong Pannirselvam, Somasuntharam Pan, Jishen Liu, Wei Jia, Fang Lu, Youming Liu, Chang Yu, Wenjie He, Jin Tan, Leng Seow |
| author_sort | Liu, Xinke |
| collection | NTU |
| description | The energy band alignment between HfAlO and GaN (0001) was characterized using
high-resolution x-ray photoelectron spectroscopy (XPS). The HfAlO was deposited
using a metal-organic chemical vapor deposition (MOCVD) gate cluster. A valence band
offset of 0.38 eV and a conduction band offset of 2.22 eV were obtained across the
HfAlO/GaN heterointerface without any passivation. With in situ SiH4 passivation
(vacuum anneal+SiH4 treatment) on the GaN surface right before HfAlO deposition, the
valence band offset and the conduction band offset across the HfAlO/GaN
heterointerface were found to be 0.51 eV and 2.09 eV, respectively. The difference in the
band alignment is believed to be dominated by the core level up-shift or chemical shift in
the GaN substrate as a result of different interlayers (ILs) formed by the two surface
preparations. |
| first_indexed | 2024-10-01T06:33:42Z |
| format | Journal Article |
| id | ntu-10356/107402 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:33:42Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1074022019-12-06T22:30:13Z Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation Liu, Xinke Liu, Zhihong Pannirselvam, Somasuntharam Pan, Jishen Liu, Wei Jia, Fang Lu, Youming Liu, Chang Yu, Wenjie He, Jin Tan, Leng Seow School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Metallic materials::Alloys The energy band alignment between HfAlO and GaN (0001) was characterized using high-resolution x-ray photoelectron spectroscopy (XPS). The HfAlO was deposited using a metal-organic chemical vapor deposition (MOCVD) gate cluster. A valence band offset of 0.38 eV and a conduction band offset of 2.22 eV were obtained across the HfAlO/GaN heterointerface without any passivation. With in situ SiH4 passivation (vacuum anneal+SiH4 treatment) on the GaN surface right before HfAlO deposition, the valence band offset and the conduction band offset across the HfAlO/GaN heterointerface were found to be 0.51 eV and 2.09 eV, respectively. The difference in the band alignment is believed to be dominated by the core level up-shift or chemical shift in the GaN substrate as a result of different interlayers (ILs) formed by the two surface preparations. ASTAR (Agency for Sci., Tech. and Research, S’pore) Accepted version 2015-04-30T01:45:28Z 2019-12-06T22:30:13Z 2015-04-30T01:45:28Z 2019-12-06T22:30:13Z 2015 2015 Journal Article Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., et al. (2015). Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation. Journal of alloys and compounds, 636, 191-195. 0925-8388 https://hdl.handle.net/10356/107402 http://hdl.handle.net/10220/25476 http://dx.doi.org/10.1016/j.jallcom.2015.02.139 en Journal of alloys and compounds © 2015 Elsevier B. V. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Alloys and Compounds, Elsevier B. V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [Article DOI: http://dx.doi.org/10.1016/j.jallcom.2015.02.139]. 21 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Metallic materials::Alloys Liu, Xinke Liu, Zhihong Pannirselvam, Somasuntharam Pan, Jishen Liu, Wei Jia, Fang Lu, Youming Liu, Chang Yu, Wenjie He, Jin Tan, Leng Seow Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title | Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title_full | Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title_fullStr | Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title_full_unstemmed | Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title_short | Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation |
| title_sort | band alignment of hfalo gan 0001 determined by x ray photoelectron spectroscopy effect of in situ sih4 passivation |
| topic | DRNTU::Engineering::Materials::Metallic materials::Alloys |
| url | https://hdl.handle.net/10356/107402 http://hdl.handle.net/10220/25476 http://dx.doi.org/10.1016/j.jallcom.2015.02.139 |
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