Band alignment of HfAlO/GaN (0001) determined by X-ray photoelectron spectroscopy : effect of in situ SiH4 passivation
The energy band alignment between HfAlO and GaN (0001) was characterized using high-resolution x-ray photoelectron spectroscopy (XPS). The HfAlO was deposited using a metal-organic chemical vapor deposition (MOCVD) gate cluster. A valence band offset of 0.38 eV and a conduction band offset of 2.2...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/107402 http://hdl.handle.net/10220/25476 http://dx.doi.org/10.1016/j.jallcom.2015.02.139 |