SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS
Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mobile electronics, wireless sensor nodes, implantable biomedical devices, etc. Due to high computing capability requirements in such applications, SRAMs play a critical role in energy consumption. This...
| Main Authors: | , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/107454 http://hdl.handle.net/10220/25506 http://dx.doi.org/10.1016/j.mejo.2014.12.003 |
| _version_ | 1826125752365481984 |
|---|---|
| author | Wang, Bo Zhou, Jun Kim, Tony Tae-Hyoung |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Wang, Bo Zhou, Jun Kim, Tony Tae-Hyoung |
| author_sort | Wang, Bo |
| collection | NTU |
| description | Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mobile electronics, wireless sensor nodes, implantable biomedical devices, etc. Due to high computing capability requirements in such applications, SRAMs play a critical role in energy consumption. This paper presents SRAM energy analysis utilizing multi-threshold (multi-Vth) voltage devices and various circuit techniques for power reduction and performance improvement, and suggests optimal device combinations for energy efficiency improvement. In general, higher-Vth devices are preferred in the cross-coupled latches and the write access transistors for reducing leakage current while lower-Vth devices are desired in the read port for implementing higher performance. However, excessively raised Vth in the write paths, i.e. the cross-coupled latches and the write access transistors, leads to slower write speed than read, quickly nullifying improved energy efficiency. In this work, the energy efficiency improvement of 6.24× is achieved only through an optimal device combination in a commercial 65 nm CMOS technology. Employing power reduction and performance boosting techniques together with the optimal device combination enhances the energy efficiency further up to 33×. |
| first_indexed | 2024-10-01T06:41:29Z |
| format | Journal Article |
| id | ntu-10356/107454 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:41:29Z |
| publishDate | 2015 |
| record_format | dspace |
| spelling | ntu-10356/1074542019-12-06T22:31:31Z SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS Wang, Bo Zhou, Jun Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mobile electronics, wireless sensor nodes, implantable biomedical devices, etc. Due to high computing capability requirements in such applications, SRAMs play a critical role in energy consumption. This paper presents SRAM energy analysis utilizing multi-threshold (multi-Vth) voltage devices and various circuit techniques for power reduction and performance improvement, and suggests optimal device combinations for energy efficiency improvement. In general, higher-Vth devices are preferred in the cross-coupled latches and the write access transistors for reducing leakage current while lower-Vth devices are desired in the read port for implementing higher performance. However, excessively raised Vth in the write paths, i.e. the cross-coupled latches and the write access transistors, leads to slower write speed than read, quickly nullifying improved energy efficiency. In this work, the energy efficiency improvement of 6.24× is achieved only through an optimal device combination in a commercial 65 nm CMOS technology. Employing power reduction and performance boosting techniques together with the optimal device combination enhances the energy efficiency further up to 33×. Accepted version 2015-05-11T13:51:34Z 2019-12-06T22:31:31Z 2015-05-11T13:51:34Z 2019-12-06T22:31:31Z 2015 2015 Journal Article Wang, B., Zhou, J., & Kim, T. T.-H. (2014). SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS. Microelectronics Journal, 46(3), 265-272. 0026-2692 https://hdl.handle.net/10356/107454 http://hdl.handle.net/10220/25506 http://dx.doi.org/10.1016/j.mejo.2014.12.003 en Microelectronics Journal © 2014 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Journal, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.mejo.2014.12.003]. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Wang, Bo Zhou, Jun Kim, Tony Tae-Hyoung SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title | SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title_full | SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title_fullStr | SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title_full_unstemmed | SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title_short | SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS |
| title_sort | sram devices and circuits optimization toward energy efficiency in multi vth cmos |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Microelectronics |
| url | https://hdl.handle.net/10356/107454 http://hdl.handle.net/10220/25506 http://dx.doi.org/10.1016/j.mejo.2014.12.003 |
| work_keys_str_mv | AT wangbo sramdevicesandcircuitsoptimizationtowardenergyefficiencyinmultivthcmos AT zhoujun sramdevicesandcircuitsoptimizationtowardenergyefficiencyinmultivthcmos AT kimtonytaehyoung sramdevicesandcircuitsoptimizationtowardenergyefficiencyinmultivthcmos |