A ZnO nanowire resistive switch
An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence...
| Main Authors: | , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/107486 http://hdl.handle.net/10220/16681 |
| _version_ | 1826113646218969088 |
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| author | Ramanujam Prabhakar, Rajiv Batabyal, Sudip Kumar Mhaisalkar, Subodh Gautam Karthik, K. R. G. Hai, L. Huang, Y. Z. |
| author2 | School of Materials Science and Engineering |
| author_facet | School of Materials Science and Engineering Ramanujam Prabhakar, Rajiv Batabyal, Sudip Kumar Mhaisalkar, Subodh Gautam Karthik, K. R. G. Hai, L. Huang, Y. Z. |
| author_sort | Ramanujam Prabhakar, Rajiv |
| collection | NTU |
| description | An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented. |
| first_indexed | 2024-10-01T03:26:37Z |
| format | Journal Article |
| id | ntu-10356/107486 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:26:37Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | ntu-10356/1074862021-01-20T04:26:08Z A ZnO nanowire resistive switch Ramanujam Prabhakar, Rajiv Batabyal, Sudip Kumar Mhaisalkar, Subodh Gautam Karthik, K. R. G. Hai, L. Huang, Y. Z. School of Materials Science and Engineering TUM CREATE Centre for Electromobility Energy Research Institute @ NTU (ERI@N) DRNTU::Engineering::Materials::Compositional materials science An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented. Published version 2013-10-22T03:38:43Z 2019-12-06T22:32:13Z 2013-10-22T03:38:43Z 2019-12-06T22:32:13Z 2013 2013 Journal Article Karthik, K. R. G., Ramanujam Prabhakar, R., Hai, L., Batabyal, S. K., Huang, Y. Z., & Mhaisalkar, S. G. (2013). A ZnO nanowire resistive switch. Applied physics letters, 103, 123114-1-123114-4. 0003-6951 https://hdl.handle.net/10356/107486 http://hdl.handle.net/10220/16681 10.1063/1.4821994 en Applied physics letters © 2013 AIP Publishing LLC.This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4821994]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Materials::Compositional materials science Ramanujam Prabhakar, Rajiv Batabyal, Sudip Kumar Mhaisalkar, Subodh Gautam Karthik, K. R. G. Hai, L. Huang, Y. Z. A ZnO nanowire resistive switch |
| title | A ZnO nanowire resistive switch |
| title_full | A ZnO nanowire resistive switch |
| title_fullStr | A ZnO nanowire resistive switch |
| title_full_unstemmed | A ZnO nanowire resistive switch |
| title_short | A ZnO nanowire resistive switch |
| title_sort | zno nanowire resistive switch |
| topic | DRNTU::Engineering::Materials::Compositional materials science |
| url | https://hdl.handle.net/10356/107486 http://hdl.handle.net/10220/16681 |
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