Van der Waals negative capacitance transistors

Van der Waals negative capacitance transistors

The Boltzmann distribution of electrons sets a fundamental barrier to lowering energy consumption in metal-oxide-semiconductor field-effect transistors (MOSFETs). Negative capacitance FET (NC-FET), as an emerging FET architecture, is promising to overcome this thermionic limit and build ultra-low-po...

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Bibliographic Details
Main Authors: Wang, Xiaowei, Yu, Peng, Lei, Zhendong, Zhu, Chao, Cao, Xun, Liu, Fucai, You, Lu, Zeng, Qingsheng, Deng, Ya, Zhou, Jiadong, Fu, Qundong, Wang, Junling, Huang, Yizhong, Liu, Zheng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2019
Subjects:
Electronic Devices
Two-dimensional Materials
Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/107516
http://hdl.handle.net/10220/49725

Internet

https://hdl.handle.net/10356/107516
http://hdl.handle.net/10220/49725

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