Impact of channel engineering on hot-electron injection in the deep-submicrometer flash memory cell
Basic mechanisms governing the generation and injection of hot electrons in the N-channel MOSFET are of fundamental importance to non-volatile memory application and reliability. In this thesis, we have reported direct observation of a non-classical hot-electron gate current in the scaled MOSFET mem...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | English |
| Published: |
2008
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/13192 |