Strategies to modulate Amorphous Oxide Semiconductor properties for low temperature transparent transistors
Amorphous Metal Oxide Semiconductors (AMOS) with properties such as high optical transparency, flexibility, and high electron mobility have emerged as a promising candidate over a-Si:H, poly-Si and organic semiconductor in the field of transparent and flexible electronics. However, the high processi...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2019
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| Online Access: | https://hdl.handle.net/10356/136480 |