Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC

Heterogeneous integration of GaN and BCD technologies and its applications to high conversion-ratio DC-DC boost converter IC

This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-v...

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Bibliographic Details
Main Authors: Meng, Fanyi, Disney, Don, Liu, Bei, Volkan, Yildirim Baris, Zhou, Ao, Liang, Zhipeng, Yi, Xiang, Selvaraj, Susai Lawrence, Peng, Lulu, Ma, Kaixue, Boon, Chirn Chye
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
Boost Converter
CMOS DC–DC Converter Complementarymetal-oxide-semiconductor
Online Access:https://hdl.handle.net/10356/137240
Description
Summary:This letter presents a novel technology for the integration of gallium nitride (GaN) power devices with silicon control circuits. It comprises stacked GaN power transistors and bipolar-CMOS-double-diffused metal-oxide-semiconductor (DMOS) (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3-70 V dc-dc boost converter is designed, implemented, and verified experimentally. It features a conversion efficiency of 70.3%, output power of 1.68 W, and compact size of 0.32 × 0.18 cm 2.

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