High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers
N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrica...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/137701 |
| _version_ | 1826112974895448064 |
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| author | Loke, Wan Khai Wang, Yue Lee, Kwang Hong Liu, Zhihong Xie, Hanlin Chiah, Siau Ben Lee, Kenneth Eng Kian Zhou, Xing Tan, Chuan Seng Ng, Geok Ing Fitzgerald, Eugene A. Yoon, Soon Fatt |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Loke, Wan Khai Wang, Yue Lee, Kwang Hong Liu, Zhihong Xie, Hanlin Chiah, Siau Ben Lee, Kenneth Eng Kian Zhou, Xing Tan, Chuan Seng Ng, Geok Ing Fitzgerald, Eugene A. Yoon, Soon Fatt |
| author_sort | Loke, Wan Khai |
| collection | NTU |
| description | N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6\times8 \mu {\text {m}} shows a dc gain of 55 at a collector current of I-{c} = 4 mA, with high collector-emitter breakdown voltage of 17 V. The high-frequency response with cutoff frequency ( f_{T} T) of 23 GHz and maximum available frequency ( f_{\text {max}} T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications. |
| first_indexed | 2024-10-01T03:15:57Z |
| format | Journal Article |
| id | ntu-10356/137701 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:15:57Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1377012020-04-09T03:54:23Z High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers Loke, Wan Khai Wang, Yue Lee, Kwang Hong Liu, Zhihong Xie, Hanlin Chiah, Siau Ben Lee, Kenneth Eng Kian Zhou, Xing Tan, Chuan Seng Ng, Geok Ing Fitzgerald, Eugene A. Yoon, Soon Fatt School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering III-V/Si Integration Bipolar Transistors N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6\times8 \mu {\text {m}} shows a dc gain of 55 at a collector current of I-{c} = 4 mA, with high collector-emitter breakdown voltage of 17 V. The high-frequency response with cutoff frequency ( f_{T} T) of 23 GHz and maximum available frequency ( f_{\text {max}} T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications. Published version 2020-04-09T03:54:23Z 2020-04-09T03:54:23Z 2020 Journal Article Loke, W. K., Wang, Y., Lee, K. H., Liu, Z., Xie, H., Chiah, S. B., ... Yoon, S. F. (2020). High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers. IEEE Journal of the Electron Devices Society, 8, 122-125. doi:10.1109/JEDS.2020.2967406 2168-6734 https://hdl.handle.net/10356/137701 10.1109/JEDS.2020.2967406 2-s2.0-85078112366 8 122 125 en IEEE Journal of the Electron Devices Society © 2020 IEEE (Open Access). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering III-V/Si Integration Bipolar Transistors Loke, Wan Khai Wang, Yue Lee, Kwang Hong Liu, Zhihong Xie, Hanlin Chiah, Siau Ben Lee, Kenneth Eng Kian Zhou, Xing Tan, Chuan Seng Ng, Geok Ing Fitzgerald, Eugene A. Yoon, Soon Fatt High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title_full | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title_fullStr | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title_full_unstemmed | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title_short | High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers |
| title_sort | high frequency characteristics of ingap gaas double heterojunction bipolar transistor epitaxially grown on 200 mm ge si wafers |
| topic | Engineering::Electrical and electronic engineering III-V/Si Integration Bipolar Transistors |
| url | https://hdl.handle.net/10356/137701 |
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