High-transconductance stretchable transistors achieved by controlled gold microcrack morphology
High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However...
| المؤلفون الرئيسيون: | , , , , , , , , , , , |
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| مؤلفون آخرون: | |
| التنسيق: | Journal Article |
| اللغة: | English |
| منشور في: |
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/137859 |
| _version_ | 1826121777911169024 |
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| author | Matsuhisa, Naoji Jiang, Ying Liu, Zhiyuan Chen, Geng Wan, Changjin Kim, Yeongin Kang, Jiheong Tran, Helen Wu, Hung-Chin You, Insang Bao, Zhenan Chen, Xiaodong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Matsuhisa, Naoji Jiang, Ying Liu, Zhiyuan Chen, Geng Wan, Changjin Kim, Yeongin Kang, Jiheong Tran, Helen Wu, Hung-Chin You, Insang Bao, Zhenan Chen, Xiaodong |
| author_sort | Matsuhisa, Naoji |
| collection | NTU |
| description | High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics. |
| first_indexed | 2024-10-01T05:37:44Z |
| format | Journal Article |
| id | ntu-10356/137859 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:37:44Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1378592023-07-14T15:56:30Z High-transconductance stretchable transistors achieved by controlled gold microcrack morphology Matsuhisa, Naoji Jiang, Ying Liu, Zhiyuan Chen, Geng Wan, Changjin Kim, Yeongin Kang, Jiheong Tran, Helen Wu, Hung-Chin You, Insang Bao, Zhenan Chen, Xiaodong School of Materials Science & Engineering Innovative Centre for Flexible Devices (iFLEX) Engineering::Materials Organic Electrochemical Transistors Stretchable Conductors High‐transconductance stretchable transistors are important for conformable and sensitive sensors for wearables and soft robotics. Remarkably high transconductance, which enables large amplification of signals, has been achieved through the use of organic electrochemical transistors (OECTs). However, the stretchability of such systems has been tempered by the lack of stretchable conductors with high stability in electrolytes, high conductance at high strain (100%), and process compatibility with active layers. Highly stretchable and strain‐resistant Au conductors employed to fabricate intrinsically stretchable OECTs are demonstrated. Notably, the conductors exhibit a sheet resistance of 33.3 Ω Sq.−1 at 120% strain, the lowest reported value to date among stretchable Au thin film conductors. High‐performance stretchable Au is realized by suppressing strain‐induced microcrack propagation through control of the microcracks formed in deposited Au thin films. Then, the highly stretchable Au conductors are utilized to fabricate intrinsically stretchable OECTs with a high transconductance both at 0% strain (0.54 mS) and 140% strain (0.14 mS). Among previously reported systems, these OECTs show the highest transconductance at high strain (>50%). Finally, the high‐performance OECTs are utilized in stretchable synaptic transistors, which are critically important for the development of soft neuromorphic computing systems to provide artificial intelligence for future soft robotics. NRF (Natl Research Foundation, S’pore) ASTAR (Agency for Sci., Tech. and Research, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-04-16T08:45:39Z 2020-04-16T08:45:39Z 2019 Journal Article Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347 2199-160X https://hdl.handle.net/10356/137859 10.1002/aelm.201900347 2-s2.0-85068529321 8 5 en Advanced Electronic Materials This is the peer reviewed version of the following article: Matsuhisa, N., Jiang, Y., Liu, Z., Chen, G., Wan, C., Kim, Y., . . . Chen, X. (2019). High-transconductance stretchable transistors achieved by controlled gold microcrack morphology. Advanced Electronic Materials, 5(8), 1900347-. doi:10.1002/aelm.201900347, which has been published in final form at https://doi.org/10.1002/aelm.201900347. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. application/pdf |
| spellingShingle | Engineering::Materials Organic Electrochemical Transistors Stretchable Conductors Matsuhisa, Naoji Jiang, Ying Liu, Zhiyuan Chen, Geng Wan, Changjin Kim, Yeongin Kang, Jiheong Tran, Helen Wu, Hung-Chin You, Insang Bao, Zhenan Chen, Xiaodong High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title | High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title_full | High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title_fullStr | High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title_full_unstemmed | High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title_short | High-transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| title_sort | high transconductance stretchable transistors achieved by controlled gold microcrack morphology |
| topic | Engineering::Materials Organic Electrochemical Transistors Stretchable Conductors |
| url | https://hdl.handle.net/10356/137859 |
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