Interfacial mechanism for efficient resistive switching in Ruddlesden-Popper perovskites for non-volatile memories
Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/...
| Main Authors: | , , , , |
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| Outros Autores: | |
| Formato: | Journal Article |
| Idioma: | English |
| Publicado em: |
2020
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| Assuntos: | |
| Acesso em linha: | https://hdl.handle.net/10356/138045 |