Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites
Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/138291 |
| _version_ | 1826125497268961280 |
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| author | Shan, Yingying Lyu, Zhensheng Guan, Xinwei Younis, Adnan Yuan, Guoliang Wang, Junling Li, Sean Wu, Tom |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Shan, Yingying Lyu, Zhensheng Guan, Xinwei Younis, Adnan Yuan, Guoliang Wang, Junling Li, Sean Wu, Tom |
| author_sort | Shan, Yingying |
| collection | NTU |
| description | Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs with sandwich structures: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in a polymer matrix, and the other is hybrid halide perovskites which have been intensively investigated recently for optoelectronic applications. We will review the recent developments in materials selection, device performance and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined. |
| first_indexed | 2024-10-01T06:37:35Z |
| format | Journal Article |
| id | ntu-10356/138291 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:37:35Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1382912020-06-01T10:26:30Z Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites Shan, Yingying Lyu, Zhensheng Guan, Xinwei Younis, Adnan Yuan, Guoliang Wang, Junling Li, Sean Wu, Tom School of Materials Science & Engineering Engineering::Materials Switching System Hybrid Resistive random-access memory (ReRAM) is expected to be the next-generation non-volatile memory device because of its fast operation speed and low power consumption. Switching media in most ReMAM are oxides which are rigid and require high-temperature processing. Here, we review two emerging types of low-cost solution-processed ReRAMs with sandwich structures: one is hybrid nanocomposites with charge-trapping nanoparticles (NPs) embedded in a polymer matrix, and the other is hybrid halide perovskites which have been intensively investigated recently for optoelectronic applications. We will review the recent developments in materials selection, device performance and operation mechanisms. Resistive switching in hybrid materials and composites is ubiquitous because of the abundant existence of charge-trapping defects and interfaces. The future challenges and potential breakthroughs will also be outlined. 2020-04-30T04:33:10Z 2020-04-30T04:33:10Z 2018 Journal Article Shan, Y., Lyu, Z., Guan, X., Younis, A., Yuan, G., Wang, J., . . . Wu, T. (2018). Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites. Physical Chemistry Chemical Physics, 20(37), 23837-23846. doi:10.1039/c8cp03945c 1463-9076 https://hdl.handle.net/10356/138291 10.1039/c8cp03945c 30204170 2-s2.0-85054068716 37 20 23837 23846 en Physical Chemistry Chemical Physics © 2018 the Owner Societies. All rights reserved. |
| spellingShingle | Engineering::Materials Switching System Hybrid Shan, Yingying Lyu, Zhensheng Guan, Xinwei Younis, Adnan Yuan, Guoliang Wang, Junling Li, Sean Wu, Tom Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title | Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title_full | Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title_fullStr | Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title_full_unstemmed | Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title_short | Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites |
| title_sort | solution processed resistive switching memory devices based on hybrid organic inorganic materials and composites |
| topic | Engineering::Materials Switching System Hybrid |
| url | https://hdl.handle.net/10356/138291 |
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