D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS
High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing sub-wavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/138354 |
| _version_ | 1826130317580173312 |
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| author | Liang, Yuan Yu, Hao Boon, Chirn Chye Li, Chenyang Kissinger, Dietmar Wang, Yong |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Liang, Yuan Yu, Hao Boon, Chirn Chye Li, Chenyang Kissinger, Dietmar Wang, Yong |
| author_sort | Liang, Yuan |
| collection | NTU |
| description | High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing sub-wavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized surface-wave, significantly reducing the radiation loss at sub-THz. A high-Q surface-wave resonator is formed by periodically drilling grooves onto split ring resonator (SRR) unit-cells with interleaving placement. Modulation is realized by tuning the inner ring of the stacked SRR. A four-ways power combined fundamental 80 GHz coupled-oscillator-network (CON) is realized by incorporating the surface-wave resonator unit-cell, which is frequency doubled to 160 GHz. Measured results show that modulator achieves the best isolation and ER under the smallest area, and the proposed CON achieves high power efficiency and power density. |
| first_indexed | 2024-10-01T07:54:30Z |
| format | Conference Paper |
| id | ntu-10356/138354 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:54:30Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1383542020-05-04T03:25:33Z D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS Liang, Yuan Yu, Hao Boon, Chirn Chye Li, Chenyang Kissinger, Dietmar Wang, Yong School of Electrical and Electronic Engineering ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC) Centre for Integrated Circuits and Systems Engineering::Electrical and electronic engineering CMOS Oscillator Resonator High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing sub-wavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized surface-wave, significantly reducing the radiation loss at sub-THz. A high-Q surface-wave resonator is formed by periodically drilling grooves onto split ring resonator (SRR) unit-cells with interleaving placement. Modulation is realized by tuning the inner ring of the stacked SRR. A four-ways power combined fundamental 80 GHz coupled-oscillator-network (CON) is realized by incorporating the surface-wave resonator unit-cell, which is frequency doubled to 160 GHz. Measured results show that modulator achieves the best isolation and ER under the smallest area, and the proposed CON achieves high power efficiency and power density. MOE (Min. of Education, S’pore) Accepted version 2020-05-04T03:25:24Z 2020-05-04T03:25:24Z 2018 Conference Paper Liang, Y., Yu, H., Boon, C. C., Li, C., Kissinger, D., & Wang, Y. (2018). D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS. Proceedings of the ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 142-145. doi:10.1109/ESSCIRC.2018.8494264 https://hdl.handle.net/10356/138354 10.1109/ESSCIRC.2018.8494264 142 145 en MOE RG86/16 © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ESSCIRC.2018.8494264 application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering CMOS Oscillator Resonator Liang, Yuan Yu, Hao Boon, Chirn Chye Li, Chenyang Kissinger, Dietmar Wang, Yong D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title | D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title_full | D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title_fullStr | D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title_full_unstemmed | D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title_short | D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS |
| title_sort | d band surface wave modulator and signal source with 40 db extinction ratio and 3 7 mw output power in 65 nm cmos |
| topic | Engineering::Electrical and electronic engineering CMOS Oscillator Resonator |
| url | https://hdl.handle.net/10356/138354 |
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