D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS

D-band surface-wave modulator and signal source with 40 dB extinction ratio and 3.7 mW output power in 65 nm CMOS

High extinction ratio (ER) modulator and high output power source are demonstrated in 65 nm CMOS by generating the surface-wave at D-band. By introducing sub-wavelength periodic corrugation structure, surface plasmon polariton (SPP) is established to propagate TM-mode signal with strongly localized...

Full description

Bibliographic Details
Main Authors:	Liang, Yuan, Yu, Hao, Boon, Chirn Chye, Li, Chenyang, Kissinger, Dietmar, Wang, Yong
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference Paper
Language:	English
Published:	2020
Subjects:	Engineering::Electrical and electronic engineering CMOS Oscillator Resonator
Online Access:	https://hdl.handle.net/10356/138354

Similar Items

A 0.013-mm2 0.53-mW/Gb/s 32-Gb/s hybrid analog equalizer under 21-dB channel loss in 65-nm CMOS
by: Balachandran, Arya, et al.
Published: (2020)

Design of a wideband variable-gain amplifier with self-compensated transistor for accurate dB-linear characteristic in 65 nm CMOS technology
by: Kong, Lingshan, et al.
Published: (2020)

Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
by: Li, Chenyang, et al.
Published: (2020)

A W-band switch-less Dicke receiver for millimeter-wave imaging in 65nm CMOS
by: Feng, Guangyin, et al.
Published: (2018)

A 65nm CMOS carrier-aggregation transceiver for IEEE 802.11 WLAN applications
by: Yi, Xiang, et al.
Published: (2020)

Compact Switched-Capacitor Power Detector With Frequency Compensation in 65-nm CMOS
by: Chenyang Li, et al.
Published: (2020-01-01)

A wideband variable-gain amplifier with a negative exponential generation in 40-nm CMOS technology
by: Dong, Yangtao, et al.
Published: (2020)

A 7.5 mW –43 dB LO leakage source‐driven wideband CMOS millimeter‐wave mixer
by: Jiafu Lin, et al.
Published: (2021-05-01)

A 23.4 mW -72-dBc reference spur 40 GHz CMOS PLL featuring a spur-compensation phase detector
by: Liang, Yuan, et al.
Published: (2022)

A 0.044-mm2 0.5-to-7-GHz resistor-plus-source-follower-feedback noise-cancelling LNA achieving a flat NF of 3.3±0.45 dB
by: Yu, Haohong, et al.
Published: (2019)

A single-channel voltage-scalable 8-GS/s 8-b > 37.5-dB SNDR time-domain ADC with asynchronous pipeline successive approximation in 28-nm CMOS
by: Chen, Qian, et al.
Published: (2023)

A 0.6 V 4 GS/s - 56.4 dB THD voltage-to-time converter in 28 nm CMOS
by: Chen, Qian, et al.
Published: (2023)

Design and analysis of D-Band on-chip modulator and signal source based on split-ring resonator
by: Liang, Yuan, et al.
Published: (2020)

A D-band amplifier in 65 nm bulk CMOS for short-distance data center communication
by: Huang, Qijun, et al.
Published: (2018)

A 40 GHz CMOS PLL with -75-dBc reference spur and 121.9-fs rms jitter featuring a quadrature sampling phase-frequency detector
by: Liang, Yuan, et al.
Published: (2022)

A 57.9-to-68.3GHz 24.6mW frequency synthesizer with in-phase injection-coupled QVCO in 65nm CMOS
by: Yi, Xiang, et al.
Published: (2013)

A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
by: Meng, Fanyi, et al.
Published: (2016)

Cell-based variable-gain amplifiers with accurate dB-linear characteristic in 0.18 µm CMOS technology
by: Liu, Hang, et al.
Published: (2015)

A 16-mW 1-GS/s with 49.6-dB SNDR TI-SAR ADC for software-defined radio in 65-nm CMOS
by: Qiu, Lei, et al.
Published: (2019)

A 16.4-dBm 20.3% PAE 22-dB Gain 77 GHz Power Amplifier in 65-nm CMOS Technology
by: Van-Son Trinh, et al.
Published: (2021-01-01)

A 100 GHz transformer-based varactor-less VCO with 11.2% tuning range in 65nm CMOS technology
by: Yi, Xiang, et al.
Published: (2013)

A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology
by: Sirous Bahrami, et al.
Published: (2023-01-01)

A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process
by: Thanh Dat Nguyen, et al.
Published: (2020-07-01)

Design Of A 65 Nm Cmos Comparator With Hysteresis
by: Aleksandr Vasjanov, et al.
Published: (2014-05-01)

Miniaturized 3-bit phase shifter for 60 GHz phased-array in 65 nm CMOS technology
by: Meng, Fanyi, et al.
Published: (2013)

Monolithic Single PMUT-on-CMOS Ultrasound System With +17 dB SNR for Imaging Applications
by: Ivan Zamora, et al.
Published: (2020-01-01)

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
by: Jose Luis Muñoz-Gamarra, et al.
Published: (2016-02-01)

A 25.1 dBm 25.9-dB Gain 25.4% PAE X-band Power Amplifier Utilizing Voltage Combining Transformer in 65-nm CMOS
by: Van-Son Trinh, et al.
Published: (2021-01-01)

A 40 GHz on-chip power combine load for mm-wave power amplifier
by: Lin, Jiafu, et al.
Published: (2020)

A 24-GHz RF Transmitter in 65-nm CMOS for In-Cabin Radar Applications
by: Suyeon Lee, et al.
Published: (2020-11-01)

A 4 GHz 60 dB variable gain amplifier with tunable DC offset cancellation in 65 nm CMOS
by: Kumar, Thangarasu Bharatha, et al.
Published: (2015)

A 0.6 V 4 GS/s −56.4 dB THD Voltage-to-Time Converter in 28 nm CMOS
by: Qian Chen, et al.
Published: (2022-01-01)

Design of CMOS buffer
by: Chan, Khang Yie
Published: (2024)

A D-Band Amplifier in 65 nm Bulk CMOS for Short-Distance Data Center Communication
by: Jiang Luo, et al.
Published: (2018-01-01)

A Compact Transformer-Based E-Band CMOS Power Amplifier with Enhanced Efficiencies of 15.6% PAE<sub>1dB</sub> and 6.5% PAE at 6 dB Power Back-Off
by: Zhennan Wei, et al.
Published: (2022-05-01)

A 0.061-mm² 1–11-GHz noise-canceling low-noise amplifier employing active feedforward with simultaneous current and noise reduction
by: Liu, Zhe, et al.
Published: (2022)

A 53-to-73GHz power amplifier with 74.5mW/mm2 output power density by 2D differential power combining in 65nm CMOS
by: Fei, Wei, et al.
Published: (2013)

17.8 A single-channel 10GS/s 8b>36.4d8 SNDR time-domain ADC featuring loop-unrolled asynchronous successive approximation in 28nm CMOS
by: Chen, Qian, et al.
Published: (2023)

A Full X-Band Phased-Array Transmit/Receive Module Chip in 65-nm CMOS Technology
by: Hyohyun Nam, et al.
Published: (2020-01-01)

Geometric Analysis and Systematic Design of Millimeter-Wave Low-Power Frequency Dividers in 65-nm CMOS
by: Mingyu Zhu, et al.
Published: (2020-01-01)