MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS

Heterojunction bipolar transistors (HBTs) with an In0.49Ga0.51P emitter and a GaAs base and collector were fabricated on epitaxial films grown directly onto Si substrates using a thin germanium (100%) buffer layer. All the materials (Ge, GaAs, In0.49Ga0.51P) were grown epitaxially using metal-organi...

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Bibliographic Details
Main Authors: Loke, Wan Khai, Lee, Kwang Hong, Wang, Yue, Tan, Chuan Seng, Fitzgerald, Eugene A., Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
III–V/Si Integration
Bipolar Transistors
Online Access:https://hdl.handle.net/10356/138539

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