Electrostatic force-driven oxide heteroepitaxy for interface control
Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the func...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/138745 |
| _version_ | 1826123135506710528 |
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| author | Ren, Zhaohui Wu, Mengjiao Chen, Xing Li, Wei Li, Ming Wang, Fang Tian, He Chen, Junze Xie, Yanwu Mai, Jiangquan Li, Xiang Lu, Xinhui Lu, Yunhao Zhang, Hua Van Tendeloo, Gustaaf Zhang, Ze Han, Gaorong |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Ren, Zhaohui Wu, Mengjiao Chen, Xing Li, Wei Li, Ming Wang, Fang Tian, He Chen, Junze Xie, Yanwu Mai, Jiangquan Li, Xiang Lu, Xinhui Lu, Yunhao Zhang, Hua Van Tendeloo, Gustaaf Zhang, Ze Han, Gaorong |
| author_sort | Ren, Zhaohui |
| collection | NTU |
| description | Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering. |
| first_indexed | 2024-10-01T05:59:42Z |
| format | Journal Article |
| id | ntu-10356/138745 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:59:42Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1387452020-06-01T10:01:57Z Electrostatic force-driven oxide heteroepitaxy for interface control Ren, Zhaohui Wu, Mengjiao Chen, Xing Li, Wei Li, Ming Wang, Fang Tian, He Chen, Junze Xie, Yanwu Mai, Jiangquan Li, Xiang Lu, Xinhui Lu, Yunhao Zhang, Hua Van Tendeloo, Gustaaf Zhang, Ze Han, Gaorong School of Materials Science & Engineering Engineering::Materials Electrostatic Force Ferroelectric Polarization Screening Oxide heterostructure interfaces create a platform to induce intriguing electric and magnetic functionalities for possible future devices. A general approach to control growth and interface structure of oxide heterostructures will offer a great opportunity for understanding and manipulating the functionalities. Here, it is reported that an electrostatic force, originating from a polar ferroelectric surface, can be used to drive oxide heteroepitaxy, giving rise to an atomically sharp and coherent interface by using a low-temperature solution method. These heterostructures adopt a fascinating selective growth, and show a saturation thickness and the reconstructed interface with concentrated charges accumulation. The ferroelectric polarization screening, developing from a solid-liquid interface to the heterostructure interface, is decisive for the specific growth. At the interface, a charge transfer and accumulation take place for electrical compensation. The facile approach presented here can be extremely useful for controlling oxide heteroepitaxy and producing intriguing interface functionality via electrostatic engineering. 2020-05-12T06:08:35Z 2020-05-12T06:08:35Z 2018 Journal Article Ren, Z., Wu, M., Chen, X., Li, W., Li, M., Wang, F., . . . Han, G. (2018). Electrostatic force-driven oxide heteroepitaxy for interface control. Advanced Materials, 30(38), 1707017-. doi:10.1002/adma.201707017 0935-9648 https://hdl.handle.net/10356/138745 10.1002/adma.201707017 30080288 2-s2.0-85052655804 38 30 en Advanced Materials © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. All rights reserved. This paper was published in Advanced Materials and is made available with permission of WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| spellingShingle | Engineering::Materials Electrostatic Force Ferroelectric Polarization Screening Ren, Zhaohui Wu, Mengjiao Chen, Xing Li, Wei Li, Ming Wang, Fang Tian, He Chen, Junze Xie, Yanwu Mai, Jiangquan Li, Xiang Lu, Xinhui Lu, Yunhao Zhang, Hua Van Tendeloo, Gustaaf Zhang, Ze Han, Gaorong Electrostatic force-driven oxide heteroepitaxy for interface control |
| title | Electrostatic force-driven oxide heteroepitaxy for interface control |
| title_full | Electrostatic force-driven oxide heteroepitaxy for interface control |
| title_fullStr | Electrostatic force-driven oxide heteroepitaxy for interface control |
| title_full_unstemmed | Electrostatic force-driven oxide heteroepitaxy for interface control |
| title_short | Electrostatic force-driven oxide heteroepitaxy for interface control |
| title_sort | electrostatic force driven oxide heteroepitaxy for interface control |
| topic | Engineering::Materials Electrostatic Force Ferroelectric Polarization Screening |
| url | https://hdl.handle.net/10356/138745 |
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