The Auger process in multilayer WSe2 crystals
Multilayer WSe2 with a larger optical density of states and absorbance is regarded as a better candidate than its monolayer counterpart for next generation optoelectronic devices, however insight into carrier dynamics is still lacking. Herein, we experimentally observed an anomalous PL quenching wit...
| Main Authors: | , , , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/138992 |
| _version_ | 1826124293022416896 |
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| author | Li, Yuanzheng Shi, Jia Chen, Heyu Wang, Rui Mi, Yang Zhang, Cen Du, Wenna Zhang, Shuai Liu, Zheng Zhang, Qing Qiu, Xiaohui Xu, Haiyang Liu, Weizhen Liu, Yichun Liu, Xinfeng |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Li, Yuanzheng Shi, Jia Chen, Heyu Wang, Rui Mi, Yang Zhang, Cen Du, Wenna Zhang, Shuai Liu, Zheng Zhang, Qing Qiu, Xiaohui Xu, Haiyang Liu, Weizhen Liu, Yichun Liu, Xinfeng |
| author_sort | Li, Yuanzheng |
| collection | NTU |
| description | Multilayer WSe2 with a larger optical density of states and absorbance is regarded as a better candidate than its monolayer counterpart for next generation optoelectronic devices, however insight into carrier dynamics is still lacking. Herein, we experimentally observed an anomalous PL quenching with decreasing temperature for multilayer WSe2. At a low temperature (77 K), the Auger processes govern carrier recombination in multilayer WSe2, which are induced by a phonon bottleneck effect and strong photon absorption, and lead to PL quenching. From transient absorption spectroscopy, two distinct Auger processes are observed: a fast one (1-2 ps) and a slow one (>190 ps), which are caused by two different deep midgap defect-levels in WSe2. Based on the Auger recombination model, these two Auger rates are quantitatively estimated at ∼6.69 (±0.05) × 10-2 and 1.22 (±0.04) × 10-3 cm2 s-1, respectively. Our current observations provide an important supplement for optimizing the optical and electric behaviors in multilayer WSe2 based devices. |
| first_indexed | 2024-10-01T06:18:17Z |
| format | Journal Article |
| id | ntu-10356/138992 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:18:17Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1389922020-06-01T10:01:34Z The Auger process in multilayer WSe2 crystals Li, Yuanzheng Shi, Jia Chen, Heyu Wang, Rui Mi, Yang Zhang, Cen Du, Wenna Zhang, Shuai Liu, Zheng Zhang, Qing Qiu, Xiaohui Xu, Haiyang Liu, Weizhen Liu, Yichun Liu, Xinfeng School of Materials Science & Engineering Center for Programmable Materials Engineering::Materials WSe2 Crystals The Auger Process Multilayer WSe2 with a larger optical density of states and absorbance is regarded as a better candidate than its monolayer counterpart for next generation optoelectronic devices, however insight into carrier dynamics is still lacking. Herein, we experimentally observed an anomalous PL quenching with decreasing temperature for multilayer WSe2. At a low temperature (77 K), the Auger processes govern carrier recombination in multilayer WSe2, which are induced by a phonon bottleneck effect and strong photon absorption, and lead to PL quenching. From transient absorption spectroscopy, two distinct Auger processes are observed: a fast one (1-2 ps) and a slow one (>190 ps), which are caused by two different deep midgap defect-levels in WSe2. Based on the Auger recombination model, these two Auger rates are quantitatively estimated at ∼6.69 (±0.05) × 10-2 and 1.22 (±0.04) × 10-3 cm2 s-1, respectively. Our current observations provide an important supplement for optimizing the optical and electric behaviors in multilayer WSe2 based devices. MOE (Min. of Education, S’pore) 2020-05-14T08:51:43Z 2020-05-14T08:51:43Z 2018 Journal Article Li, Y., Shi, J., Chen, H., Wang, R., Mi, Y., Zhang C., . . . Liu, X. (2018). The Auger process in multilayer WSe2 crystals. Nanoscale, 10(37), 17585--17592. doi:10.1039/c8nr02567c 2040-3364 https://hdl.handle.net/10356/138992 10.1039/c8nr02567c 29943785 2-s2.0-85054263435 37 10 17585 17592 en Nanoscale © 2018 The Royal Society of Chemistry. All rights reserved. |
| spellingShingle | Engineering::Materials WSe2 Crystals The Auger Process Li, Yuanzheng Shi, Jia Chen, Heyu Wang, Rui Mi, Yang Zhang, Cen Du, Wenna Zhang, Shuai Liu, Zheng Zhang, Qing Qiu, Xiaohui Xu, Haiyang Liu, Weizhen Liu, Yichun Liu, Xinfeng The Auger process in multilayer WSe2 crystals |
| title | The Auger process in multilayer WSe2 crystals |
| title_full | The Auger process in multilayer WSe2 crystals |
| title_fullStr | The Auger process in multilayer WSe2 crystals |
| title_full_unstemmed | The Auger process in multilayer WSe2 crystals |
| title_short | The Auger process in multilayer WSe2 crystals |
| title_sort | auger process in multilayer wse2 crystals |
| topic | Engineering::Materials WSe2 Crystals The Auger Process |
| url | https://hdl.handle.net/10356/138992 |
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