Multi-trap energy states in GaN HEMTs : characterization and modeling
In this work, presence of multi-trap energy (MTE) levels in the GaN energy bandgap of AlGaN/GaN HEMT is studied based on conductance method as well as temperature-dependent current transient measurements. Using conductance method, it is observed that the MTE model shows a better fit with the measure...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139024 |