Synaptic CMOS transistor
Neuromorphic systems inspired by the brain have gained much popularity in the computing world for its potential energy-efficient computation. To fully realisse a developed neuromorphic hardware application, large-scale integration of artificial synapses onto a single computing chip is required. In t...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/139089 |
| _version_ | 1824455339130486784 |
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| author | Chai, Zhen Hong |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Chai, Zhen Hong |
| author_sort | Chai, Zhen Hong |
| collection | NTU |
| description | Neuromorphic systems inspired by the brain have gained much popularity in the computing world for its potential energy-efficient computation. To fully realisse a developed neuromorphic hardware application, large-scale integration of artificial synapses onto a single computing chip is required. In this work, electrical measurements were conducted on commercial level TiN/HfO2 gated n-channel MOSFET transistor (with an equivalent oxide thickness of 1.7nm) to demonstrate that it can exhibit some critical synaptic characteristics of a biological synapse such as excitatory and inhibitory postsynaptic current (EPSC and IPSC), short-term plasticity (STP) and long-term potentiation (LTP), metaplasticity, and spike timing dependent plasticity (STDP). The mechanism behind the output characteristic of MOSFET to exhibit synaptic-like response is the charge trapping and de-trapping at defects in the oxide and oxide/semiconductor interface. The readily available CMOS transistor can be a potential fundamental building block for an artificial neural network to drive towards a commercialised neuromorphic system. |
| first_indexed | 2025-02-19T03:36:38Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/139089 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:36:38Z |
| publishDate | 2020 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1390892023-07-07T18:45:58Z Synaptic CMOS transistor Chai, Zhen Hong Ang Diing Shenp School of Electrical and Electronic Engineering edsang@ntu.edu.sg Engineering::Electrical and electronic engineering Neuromorphic systems inspired by the brain have gained much popularity in the computing world for its potential energy-efficient computation. To fully realisse a developed neuromorphic hardware application, large-scale integration of artificial synapses onto a single computing chip is required. In this work, electrical measurements were conducted on commercial level TiN/HfO2 gated n-channel MOSFET transistor (with an equivalent oxide thickness of 1.7nm) to demonstrate that it can exhibit some critical synaptic characteristics of a biological synapse such as excitatory and inhibitory postsynaptic current (EPSC and IPSC), short-term plasticity (STP) and long-term potentiation (LTP), metaplasticity, and spike timing dependent plasticity (STDP). The mechanism behind the output characteristic of MOSFET to exhibit synaptic-like response is the charge trapping and de-trapping at defects in the oxide and oxide/semiconductor interface. The readily available CMOS transistor can be a potential fundamental building block for an artificial neural network to drive towards a commercialised neuromorphic system. Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-15T05:59:43Z 2020-05-15T05:59:43Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/139089 en A2016-191 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Chai, Zhen Hong Synaptic CMOS transistor |
| title | Synaptic CMOS transistor |
| title_full | Synaptic CMOS transistor |
| title_fullStr | Synaptic CMOS transistor |
| title_full_unstemmed | Synaptic CMOS transistor |
| title_short | Synaptic CMOS transistor |
| title_sort | synaptic cmos transistor |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/139089 |
| work_keys_str_mv | AT chaizhenhong synapticcmostransistor |