Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates
2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown...
| Main Authors: | , , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/139355 |
| _version_ | 1826113566488395776 |
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| author | Fu, Qundong Zhu, Chao Zhao, Xiaoxu Wang, Xingli Chaturvedi, Apoorva Zhu, Chao Wang, Xiaowei Zeng, Qingsheng Zhou, Jiadong Liu, Fucai Tay, Beng Kang Zhang, Hua Pennycook, Stephen J. Liu, Zheng |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Fu, Qundong Zhu, Chao Zhao, Xiaoxu Wang, Xingli Chaturvedi, Apoorva Zhu, Chao Wang, Xiaowei Zeng, Qingsheng Zhou, Jiadong Liu, Fucai Tay, Beng Kang Zhang, Hua Pennycook, Stephen J. Liu, Zheng |
| author_sort | Fu, Qundong |
| collection | NTU |
| description | 2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies. |
| first_indexed | 2024-10-01T03:25:19Z |
| format | Journal Article |
| id | ntu-10356/139355 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:25:19Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1393552023-07-14T16:04:23Z Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates Fu, Qundong Zhu, Chao Zhao, Xiaoxu Wang, Xingli Chaturvedi, Apoorva Zhu, Chao Wang, Xiaowei Zeng, Qingsheng Zhou, Jiadong Liu, Fucai Tay, Beng Kang Zhang, Hua Pennycook, Stephen J. Liu, Zheng School of Materials Science & Engineering Research Techno Plaza Engineering::Materials 2D Materials Bismuth Oxyselenide 2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2 O2 Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2 O2 Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 × 104 A W-1 , a photoconductive gain of more than 104 , and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 × 1013 Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Accepted version 2020-05-19T04:24:10Z 2020-05-19T04:24:10Z 2019 Journal Article Fu, Q., Zhu, C., Zhao, X., Wang, X., Chaturvedi, A., Zhu, C., . . ., Liu, Z. (2019). Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Advanced materials, 31(1), 1804945-. doi:10.1002/adma.201804945 0935-9648 https://hdl.handle.net/10356/139355 10.1002/adma.201804945 30417479 2-s2.0-85056286005 1 31 en Advanced materials This is the accepted version of the following article: Fu, Q., Zhu, C., Zhao, X., Wang, X., Chaturvedi, A., Zhu, C., . . ., Liu, Z. (2019). Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates. Advanced materials, 31(1), 1804945-., which has been published in final form at 10.1002/adma.201804945. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html]. application/pdf |
| spellingShingle | Engineering::Materials 2D Materials Bismuth Oxyselenide Fu, Qundong Zhu, Chao Zhao, Xiaoxu Wang, Xingli Chaturvedi, Apoorva Zhu, Chao Wang, Xiaowei Zeng, Qingsheng Zhou, Jiadong Liu, Fucai Tay, Beng Kang Zhang, Hua Pennycook, Stephen J. Liu, Zheng Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title | Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title_full | Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title_fullStr | Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title_full_unstemmed | Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title_short | Ultrasensitive 2D Bi2O2Se phototransistors on silicon substrates |
| title_sort | ultrasensitive 2d bi2o2se phototransistors on silicon substrates |
| topic | Engineering::Materials 2D Materials Bismuth Oxyselenide |
| url | https://hdl.handle.net/10356/139355 |
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