Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings
The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibi...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2020
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| Online Access: | https://hdl.handle.net/10356/139410 |
| _version_ | 1826117194413506560 |
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| author | Li, Yang Zhang, Cheng Gu, Peiyang Wang, Zilong Li, Zhengqiang Li, Hua Lu, Jianmei Zhang, Qichun |
| author2 | School of Materials Science & Engineering |
| author_facet | School of Materials Science & Engineering Li, Yang Zhang, Cheng Gu, Peiyang Wang, Zilong Li, Zhengqiang Li, Hua Lu, Jianmei Zhang, Qichun |
| author_sort | Li, Yang |
| collection | NTU |
| description | The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n≥10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics. |
| first_indexed | 2024-10-01T04:23:38Z |
| format | Journal Article |
| id | ntu-10356/139410 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:23:38Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1394102020-06-01T10:21:11Z Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings Li, Yang Zhang, Cheng Gu, Peiyang Wang, Zilong Li, Zhengqiang Li, Hua Lu, Jianmei Zhang, Qichun School of Materials Science & Engineering Engineering::Materials Conjugation Heterocycles The diverse functionalities of large N-heteroacenes continue to be developed in terms of their strategic synthesis and application in the organic electronic field. Here, we report a novel large stable pyrene-containing N-heteroacene with ten linearly-annulated rings in one row. Remarkably, it exhibited excellent tri-state resistive memory property, which held great promise to achieve ultrahigh-density data storage. To the best of our knowledge, it is the first demonstration of organic multistate memory device based on large N-heteroacene (n≥10), which provides guidelines for designing more proof-of-concept larger N-heteroacene-based memory electronics. 2020-05-19T07:01:01Z 2020-05-19T07:01:01Z 2018 Journal Article Li, Y., Zhang, C., Gu, P., Wang, Z., Li, Z., Li, H., . . . Zhang, Q. (2018). Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings. Chemistry - A European Journal, 24(31), 7845-7851. doi:10.1002/chem.201801146 0947-6539 https://hdl.handle.net/10356/139410 10.1002/chem.201801146 29572988 2-s2.0-85046290810 31 24 7845 7851 en Chemistry - A European Journal This is the accepted version of the following article: Li, Y., Zhang, C., Gu, P., Wang, Z., Li, Z., Li, H., . . . Zhang, Q. (2018). Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings. Chemistry - A European Journal, 24(31), 7845-7851, which has been published in final form at dx.doi.org/10.1002/chem.201801146. This article may be used for non-commercial purposes in accordance with the Wiley Self-Archiving Policy [https://authorservices.wiley.com/authorresources/Journal-Authors/licensing/self-archiving.html]. |
| spellingShingle | Engineering::Materials Conjugation Heterocycles Li, Yang Zhang, Cheng Gu, Peiyang Wang, Zilong Li, Zhengqiang Li, Hua Lu, Jianmei Zhang, Qichun Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title | Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title_full | Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title_fullStr | Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title_full_unstemmed | Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title_short | Nonvolatile tri-state resistive memory behavior of a stable pyrene-fused N-heteroacene with ten linearly-annulated rings |
| title_sort | nonvolatile tri state resistive memory behavior of a stable pyrene fused n heteroacene with ten linearly annulated rings |
| topic | Engineering::Materials Conjugation Heterocycles |
| url | https://hdl.handle.net/10356/139410 |
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