High-efficiency all-inorganic full-colour quantum dot light-emitting diodes
All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted significant attention for solid state lighting and flat panel display applications. However, the performance for the present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs...
| Main Authors: | , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Online Access: | https://hdl.handle.net/10356/139567 |
| _version_ | 1824454525392519168 |
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| author | Yang, Xuyong Zhang, Zi-Hui Ding, Tao Wang, Ning Chen, Guo Dang, Cuong Demir, Hilmi Volkan Sun, Xiao Wei |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Yang, Xuyong Zhang, Zi-Hui Ding, Tao Wang, Ning Chen, Guo Dang, Cuong Demir, Hilmi Volkan Sun, Xiao Wei |
| author_sort | Yang, Xuyong |
| collection | NTU |
| description | All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted significant attention for solid state lighting and flat panel display applications. However, the performance for the present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs with organic charge transport layers. Our all-inorganic full-colour QLEDs show the maximum brightness and efficiency values of 21,600 cd/m2 and 6.52%, respectively, which are record-breaking among the existing all-inorganic QLEDs. The outstanding performance is achieved by an efficient design of device architecture with solution-processed charge transport layers (CTLs). Meanwhile, the ultrathin double-sided insulating layers are inserted between the quantum dot emissive layer and their adjacent oxide electron transport layers to better balance charge injection in the device and reduce the quenching effects for inorganic CTLs on QD emission. This study is the first account for high-performance, all-inorganic QLEDs insightfully offering detailed investigations into the performance promotion for inorganic electroluminescent devices. |
| first_indexed | 2025-02-19T03:23:42Z |
| format | Journal Article |
| id | ntu-10356/139567 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2025-02-19T03:23:42Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1395672020-05-20T05:55:31Z High-efficiency all-inorganic full-colour quantum dot light-emitting diodes Yang, Xuyong Zhang, Zi-Hui Ding, Tao Wang, Ning Chen, Guo Dang, Cuong Demir, Hilmi Volkan Sun, Xiao Wei School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Luminous! Center of Excellence for Semiconductor Lighting and Displays Engineering::Electrical and electronic engineering Electroluminescent Devices Quantum Dots All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted significant attention for solid state lighting and flat panel display applications. However, the performance for the present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs with organic charge transport layers. Our all-inorganic full-colour QLEDs show the maximum brightness and efficiency values of 21,600 cd/m2 and 6.52%, respectively, which are record-breaking among the existing all-inorganic QLEDs. The outstanding performance is achieved by an efficient design of device architecture with solution-processed charge transport layers (CTLs). Meanwhile, the ultrathin double-sided insulating layers are inserted between the quantum dot emissive layer and their adjacent oxide electron transport layers to better balance charge injection in the device and reduce the quenching effects for inorganic CTLs on QD emission. This study is the first account for high-performance, all-inorganic QLEDs insightfully offering detailed investigations into the performance promotion for inorganic electroluminescent devices. 2020-05-20T05:55:31Z 2020-05-20T05:55:31Z 2018 Journal Article Yang, X., Zhang, Z.-H., Ding, T., Wang, N., Chen, G., Dang, C., . . . Sun, X. W. (2018). High-efficiency all-inorganic full-colour quantum dot light-emitting diodes. Nano Energy, 46, 229-233. doi:10.1016/j.nanoen.2018.02.002 2211-2855 https://hdl.handle.net/10356/139567 10.1016/j.nanoen.2018.02.002 2-s2.0-85041484099 46 229 233 en Nano Energy © 2018 Elsevier Ltd. All rights reserved. |
| spellingShingle | Engineering::Electrical and electronic engineering Electroluminescent Devices Quantum Dots Yang, Xuyong Zhang, Zi-Hui Ding, Tao Wang, Ning Chen, Guo Dang, Cuong Demir, Hilmi Volkan Sun, Xiao Wei High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title | High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title_full | High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title_fullStr | High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title_full_unstemmed | High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title_short | High-efficiency all-inorganic full-colour quantum dot light-emitting diodes |
| title_sort | high efficiency all inorganic full colour quantum dot light emitting diodes |
| topic | Engineering::Electrical and electronic engineering Electroluminescent Devices Quantum Dots |
| url | https://hdl.handle.net/10356/139567 |
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