γ-ray radiation effects on an HfO2-based resistive memory device

γ-ray radiation effects on an HfO2-based resistive memory device

In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistanc...

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Bibliographic Details
Main Authors: Hu, Shaogang, Liu, Yang Liu, Chen, Tupei, Guo, Qi, Li, Yu-Dong, Zhang, Xing-Yao, Deng, L.J., Yu, Qi, Yin, You, Hosaka, Sumio
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering
γ Ray
Hafnium Oxide
Online Access:https://hdl.handle.net/10356/139839
Description
Summary:In this paper, electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after γ-ray radiation with various total ionizing doses (TIDs). The device can still function properly even if irradiated with a TID of 20 Mrad(Si). The small changes of resistance states and set/reset voltages induced by γ-ray radiation can hardly influence the proper function of the device. The γ-ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure. The radiation effects on the resistive switching memory device show little dependence on the cell area. The results suggest that the HfO2-based resistive switching memory device has good γ-ray radiation-resistant capability.

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