Resistive switching devices based on halide perovskites
In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quali...
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| Format: | Final Year Project (FYP) |
| Language: | English |
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Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/140101 |
| _version_ | 1811688088220467200 |
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| author | Yeo, Derek Kai Wen |
| author2 | Ang Diing Shenp |
| author_facet | Ang Diing Shenp Yeo, Derek Kai Wen |
| author_sort | Yeo, Derek Kai Wen |
| collection | NTU |
| description | In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quality films, several methods were deployed such as increasing the stirring time of the solution during the preparation phase, increasing the precursors DMF/DMSO ratio, conducting the experiments in a different environment (glove box), coating the substrate multiple times, and the variations of thickness of films coated. The results will be described in detail and following which, improvements to be made in the future. |
| first_indexed | 2024-10-01T05:26:39Z |
| format | Final Year Project (FYP) |
| id | ntu-10356/140101 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:26:39Z |
| publishDate | 2020 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1401012023-07-07T18:38:45Z Resistive switching devices based on halide perovskites Yeo, Derek Kai Wen Ang Diing Shenp School of Electrical and Electronic Engineering Zviad Tsakadze EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering::Semiconductors In this Final Year Project, Bismuth-based halide perovskite will be studied and examined, as well as its resistive switching capabilities. The methods of preparation of the film will be described in detail and the equipment used throughout the project will be stated. In order to achieve a good quality films, several methods were deployed such as increasing the stirring time of the solution during the preparation phase, increasing the precursors DMF/DMSO ratio, conducting the experiments in a different environment (glove box), coating the substrate multiple times, and the variations of thickness of films coated. The results will be described in detail and following which, improvements to be made in the future. Bachelor of Engineering (Electrical and Electronic Engineering) 2020-05-26T07:43:51Z 2020-05-26T07:43:51Z 2020 Final Year Project (FYP) https://hdl.handle.net/10356/140101 en A2017-191 application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Yeo, Derek Kai Wen Resistive switching devices based on halide perovskites |
| title | Resistive switching devices based on halide perovskites |
| title_full | Resistive switching devices based on halide perovskites |
| title_fullStr | Resistive switching devices based on halide perovskites |
| title_full_unstemmed | Resistive switching devices based on halide perovskites |
| title_short | Resistive switching devices based on halide perovskites |
| title_sort | resistive switching devices based on halide perovskites |
| topic | Engineering::Electrical and electronic engineering::Semiconductors |
| url | https://hdl.handle.net/10356/140101 |
| work_keys_str_mv | AT yeoderekkaiwen resistiveswitchingdevicesbasedonhalideperovskites |