Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing

Hardware realization of artificial neural networks (ANNs) requires analogue weights to be encoded into the device conductances via blind update and access operations, leveraging Kirchhoff’s circuit laws. However, most memristive solutions lag behind in this aspect due to numerous device nonidealitie...

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Main Authors: Ng, Sien, John, Rohit Abraham, Yang, Jing-ting, Mathews, Nripan
Other Authors: School of Materials Science and Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/140531
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author Ng, Sien
John, Rohit Abraham
Yang, Jing-ting
Mathews, Nripan
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Ng, Sien
John, Rohit Abraham
Yang, Jing-ting
Mathews, Nripan
author_sort Ng, Sien
collection NTU
description Hardware realization of artificial neural networks (ANNs) requires analogue weights to be encoded into the device conductances via blind update and access operations, leveraging Kirchhoff’s circuit laws. However, most memristive solutions lag behind in this aspect due to numerous device nonidealities, like limited number of addressable states, need for a stringent compliance current control, and an electroforming process. By modulating the oxygen vacancy profile of tin oxide switching elements, here we design and evaluate multistate memristors as synaptic connections for brain-inspired computing. Harnessing the advantages of a forming-less compliance-free operation, our devices display gradual switching transitions across multiple conductance states, sufficing the switching requirements of synaptic connections in an ANN. The soft boundary conditions are analyzed systematically, and spike-based plasticity rules, state-dependent spike-timing-dependent-plasticity (STDP) modulations, ternary digital logic, and analogue updatability schemes are proposed and demonstrated comprehensively to establish the analogue programming window of our memristors.
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spelling ntu-10356/1405312023-07-14T15:58:13Z Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing Ng, Sien John, Rohit Abraham Yang, Jing-ting Mathews, Nripan School of Materials Science and Engineering Energy Research Institute @ NTU (ERI@N) Engineering::Materials Forming-less Compliance-free Hardware realization of artificial neural networks (ANNs) requires analogue weights to be encoded into the device conductances via blind update and access operations, leveraging Kirchhoff’s circuit laws. However, most memristive solutions lag behind in this aspect due to numerous device nonidealities, like limited number of addressable states, need for a stringent compliance current control, and an electroforming process. By modulating the oxygen vacancy profile of tin oxide switching elements, here we design and evaluate multistate memristors as synaptic connections for brain-inspired computing. Harnessing the advantages of a forming-less compliance-free operation, our devices display gradual switching transitions across multiple conductance states, sufficing the switching requirements of synaptic connections in an ANN. The soft boundary conditions are analyzed systematically, and spike-based plasticity rules, state-dependent spike-timing-dependent-plasticity (STDP) modulations, ternary digital logic, and analogue updatability schemes are proposed and demonstrated comprehensively to establish the analogue programming window of our memristors. MOE (Min. of Education, S’pore) Accepted version 2020-05-30T07:43:05Z 2020-05-30T07:43:05Z 2020 Journal Article Ng, S., John, R. A., Yang, J.-t., & Mathews, N. (2020). Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing. ACS Applied Electronic Materials, 2(3), 817-826. doi:10.1021/acsaelm.0c00002 2637-6113 https://hdl.handle.net/10356/140531 10.1021/acsaelm.0c00002 3 2 817 826 en MOE2016-T2-1100 MOE2018-T2-2-083 ACS Applied Electronic Materials https://doi.org/10.21979/N9/YWTJBM This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.0c00002 application/pdf
spellingShingle Engineering::Materials
Forming-less
Compliance-free
Ng, Sien
John, Rohit Abraham
Yang, Jing-ting
Mathews, Nripan
Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title_full Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title_fullStr Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title_full_unstemmed Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title_short Forming-less compliance-free multistate memristors as synaptic connections for brain-inspired computing
title_sort forming less compliance free multistate memristors as synaptic connections for brain inspired computing
topic Engineering::Materials
Forming-less
Compliance-free
url https://hdl.handle.net/10356/140531
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