InSe monolayer : synthesis, structure and ultra-high second-harmonic generation
III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physica...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/140641 |
| _version_ | 1826123313113464832 |
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| author | Zhou, Jiadong Shi, Jia Zeng, Qingsheng Chen, Yu Niu, Lin Liu, Fucai Yu, Ting Suenaga, Kazu Liu, Xinfeng Lin, Junhao Liu, Zheng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhou, Jiadong Shi, Jia Zeng, Qingsheng Chen, Yu Niu, Lin Liu, Fucai Yu, Ting Suenaga, Kazu Liu, Xinfeng Lin, Junhao Liu, Zheng |
| author_sort | Zhou, Jiadong |
| collection | NTU |
| description | III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physical vapor deposition (PVD) method. The high quality of the sample was confirmed by complementary characterization techniques such as Raman spectroscopy, atomic force microscopy (AFM) and high resolution annular dark field scanning transmission electron microscopy (ADF-STEM). We found the co-existence of different stacking sequence (β- and γ-InSe) in the same flake with a sharp grain boundary in few-layered InSe. Edge reconstruction is also observed in monolayer InSe, which has a distinct atomic structure from the bulk lattice. Moreover, we discovered that the second-harmonic generation (SHG) signal from monolayer InSe shows large optical second-order susceptibility that is 1–2 orders of magnitude higher than MoS2, and even 3 times of the largest value reported in monolayer GaSe. These results make atom-thin InSe a promising candidate for optoelectronic and photosensitive device applications. |
| first_indexed | 2024-10-01T06:02:37Z |
| format | Journal Article |
| id | ntu-10356/140641 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:02:37Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1406412020-06-01T10:43:37Z InSe monolayer : synthesis, structure and ultra-high second-harmonic generation Zhou, Jiadong Shi, Jia Zeng, Qingsheng Chen, Yu Niu, Lin Liu, Fucai Yu, Ting Suenaga, Kazu Liu, Xinfeng Lin, Junhao Liu, Zheng School of Electrical and Electronic Engineering School of Materials Science & Engineering School of Physical and Mathematical Sciences Centre for Programmable Materials Centre for Disruptive Photonic Technologies Centre for Micro-/Nano-electronics (NOVITAS) CNRS International NTU THALES Research Alliance (CINTRA) Environmental Chemistry and Materials Centre Nanyang Environment and Water Research Institute Research Techno Plaza Engineering::Materials InSe 2D Materials III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physical vapor deposition (PVD) method. The high quality of the sample was confirmed by complementary characterization techniques such as Raman spectroscopy, atomic force microscopy (AFM) and high resolution annular dark field scanning transmission electron microscopy (ADF-STEM). We found the co-existence of different stacking sequence (β- and γ-InSe) in the same flake with a sharp grain boundary in few-layered InSe. Edge reconstruction is also observed in monolayer InSe, which has a distinct atomic structure from the bulk lattice. Moreover, we discovered that the second-harmonic generation (SHG) signal from monolayer InSe shows large optical second-order susceptibility that is 1–2 orders of magnitude higher than MoS2, and even 3 times of the largest value reported in monolayer GaSe. These results make atom-thin InSe a promising candidate for optoelectronic and photosensitive device applications. NRF (Natl Research Foundation, S’pore) 2020-06-01T03:14:20Z 2020-06-01T03:14:20Z 2018 Journal Article Zhou, J., Shi, J., Zeng, Q., Chen, Y., Niu, L., Liu, F., . . . Liu, Z. (2018). InSe monolayer : synthesis, structure and ultra-high second-harmonic generation. 2D Materials, 5(2), 025019-. doi:10.1088/2053-1583/aab390 2053-1583 https://hdl.handle.net/10356/140641 10.1088/2053-1583/aab390 2-s2.0-85045763712 2 5 en 2D Materials © 2018 IOP Publishing Ltd. All rights reserved. |
| spellingShingle | Engineering::Materials InSe 2D Materials Zhou, Jiadong Shi, Jia Zeng, Qingsheng Chen, Yu Niu, Lin Liu, Fucai Yu, Ting Suenaga, Kazu Liu, Xinfeng Lin, Junhao Liu, Zheng InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title | InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title_full | InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title_fullStr | InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title_full_unstemmed | InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title_short | InSe monolayer : synthesis, structure and ultra-high second-harmonic generation |
| title_sort | inse monolayer synthesis structure and ultra high second harmonic generation |
| topic | Engineering::Materials InSe 2D Materials |
| url | https://hdl.handle.net/10356/140641 |
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