InSe monolayer : synthesis, structure and ultra-high second-harmonic generation

III–IV layered materials such as indium selenide have excellent photoelectronic properties. However, synthesis of materials in such group, especially with a controlled thickness down to monolayer, still remains challenging. Herein, we demonstrate the successful synthesis of monolayer InSe by physica...

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Bibliographic Details
Main Authors: Zhou, Jiadong, Shi, Jia, Zeng, Qingsheng, Chen, Yu, Niu, Lin, Liu, Fucai, Yu, Ting, Suenaga, Kazu, Liu, Xinfeng, Lin, Junhao, Liu, Zheng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/140641