High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Comp...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Online Access: | https://hdl.handle.net/10356/141368 |
| _version_ | 1811683088079519744 |
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| author | Zhou, Hao Xu, Shengqiang Lin, Yiding Huang, Yi-Chiau Son, Bongkwon Chen, Qimiao Guo, Xin Lee, Kwang Hong Goh, Simon Chun-Kiat Gong, Xiao Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zhou, Hao Xu, Shengqiang Lin, Yiding Huang, Yi-Chiau Son, Bongkwon Chen, Qimiao Guo, Xin Lee, Kwang Hong Goh, Simon Chun-Kiat Gong, Xiao Tan, Chuan Seng |
| author_sort | Zhou, Hao |
| collection | NTU |
| description | We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm. |
| first_indexed | 2024-10-01T04:07:10Z |
| format | Journal Article |
| id | ntu-10356/141368 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:07:10Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1413682020-07-07T01:03:59Z High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm Zhou, Hao Xu, Shengqiang Lin, Yiding Huang, Yi-Chiau Son, Bongkwon Chen, Qimiao Guo, Xin Lee, Kwang Hong Goh, Simon Chun-Kiat Gong, Xiao Tan, Chuan Seng School of Electrical and Electronic Engineering Low Energy Electronic Systems Singapore-MIT Alliance Programme Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Compared with the non-photon-trapping counterparts, the patterning and etching of photon-trapping microstructure can be processed in the same step with mesa structure at no additional cost. A four-fold enhancement of photo response was achieved at 2 µm. Although the incorporation of photo-trapping microstructure degrades the dark current density which increases from 31.5 to 45.2 mA/cm2 at −1 V, it benefits an improved 3-dB bandwidth of 2.7 GHz at bias voltage at −5 V. The optical performance of GeSn/Ge MQW photon-trapping photodetector manifests its great potential as a candidate for efficient 2 µm communication. Additionally, the underlying GeOI platform enables its feasibility of monolithic integration with other photonic components such as waveguide, modulator and (de)multiplexer for optoelectronic integrated circuits (OEICs) operating at 2 µm. NRF (Natl Research Foundation, S’pore) MOE (Min. of Education, S’pore) Published version 2020-06-08T03:07:16Z 2020-06-08T03:07:16Z 2020 Journal Article Zhou, H., Xu, S., Lin, Y., Huang, Y.-C., Son, B., Chen, Q., . . . Tan, C. S. (2020). High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm. Optics Express, 28(7), 10280-10293. doi:10.1364/OE.389378 1094-4087 https://hdl.handle.net/10356/141368 10.1364/OE.389378 7 28 10280 10293 en Optics Express © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector Zhou, Hao Xu, Shengqiang Lin, Yiding Huang, Yi-Chiau Son, Bongkwon Chen, Qimiao Guo, Xin Lee, Kwang Hong Goh, Simon Chun-Kiat Gong, Xiao Tan, Chuan Seng High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title_full | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title_fullStr | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title_full_unstemmed | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title_short | High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm |
| title_sort | high efficiency gesn ge multiple quantum well photodetectors with photon trapping microstructures operating at 2 µm |
| topic | Engineering::Electrical and electronic engineering::Semiconductors Germanium Photodetector |
| url | https://hdl.handle.net/10356/141368 |
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