Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

Dark current characteristics of germanium (Ge) vertical p-i-n photodetectors were studied. Ge photodetectors were demonstrated on the germanium-on-insulator (GOI) platforms realized via direct wafer bonding and layer transfer. GOI platforms with two different threading dislocation densities (TDDs) o...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Chen, Qimiao, Tan, Chuan Seng
Awduron Eraill:	School of Electrical and Electronic Engineering
Fformat:	Journal Article
Iaith:	English
Cyhoeddwyd:	2020
Pynciau:	Engineering::Electrical and electronic engineering Germanium Photodetectors
Mynediad Ar-lein:	https://hdl.handle.net/10356/142093

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