3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage
Growing very large size silicon ingots with low dislocation density is a critical issue for the photovoltaic industry to reduce the production cost of the high-efficiency solar cell for affordable green energy. The thermal stresses, which are produced as the result of the non-uniform temperature fie...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2020
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| Online Access: | https://hdl.handle.net/10356/142229 |
| _version_ | 1811685497729187840 |
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| author | Lin, Maohua Wu, Xinjiang Liao, Xinqin Shi, Min Ou, Disheng Tsai, Chi-Tay |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lin, Maohua Wu, Xinjiang Liao, Xinqin Shi, Min Ou, Disheng Tsai, Chi-Tay |
| author_sort | Lin, Maohua |
| collection | NTU |
| description | Growing very large size silicon ingots with low dislocation density is a critical issue for the photovoltaic industry to reduce the production cost of the high-efficiency solar cell for affordable green energy. The thermal stresses, which are produced as the result of the non-uniform temperature field, would generate dislocation in the ingot. This is a complicated thermal viscoplasticity process during the cooling process of crystal growth. A nonlinear three-dimensional transient formulation derived from the Hassen-Sumino model (HAS) was applied to predict the number of dislocation densities, which couples the macroscopic viscoplastic deformation with the microscopic dislocation dynamics. A typical cooling process during the growth of very large size (G5 size: 0.84 m × 0.84 m × 0.3 m) Si ingot is used as an example to validate the developed HAS model and the results are compared with those obtained from qualitatively critical resolved shear stress model (CRSS). The result demonstrates that this finite element model not only predicts a similar pattern of dislocation generation with the CRSS model but also anticipate the dislocation density quantity generated in the Si ingot. A modified cooling process is also employed to study the effect of the cooling process on the generation of the dislocation. It clearly shows that dislocation density is drastically decreased by modifying the cooling process. The results obtained from this model can provide valuable information for engineers to design a better cooling process for reducing the dislocation density produced in the Si ingot under the crystal growth process. |
| first_indexed | 2024-10-01T04:45:28Z |
| format | Journal Article |
| id | ntu-10356/142229 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:45:28Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1422292020-06-17T08:10:03Z 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage Lin, Maohua Wu, Xinjiang Liao, Xinqin Shi, Min Ou, Disheng Tsai, Chi-Tay School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Hassen-sumino Model CRSS Model Growing very large size silicon ingots with low dislocation density is a critical issue for the photovoltaic industry to reduce the production cost of the high-efficiency solar cell for affordable green energy. The thermal stresses, which are produced as the result of the non-uniform temperature field, would generate dislocation in the ingot. This is a complicated thermal viscoplasticity process during the cooling process of crystal growth. A nonlinear three-dimensional transient formulation derived from the Hassen-Sumino model (HAS) was applied to predict the number of dislocation densities, which couples the macroscopic viscoplastic deformation with the microscopic dislocation dynamics. A typical cooling process during the growth of very large size (G5 size: 0.84 m × 0.84 m × 0.3 m) Si ingot is used as an example to validate the developed HAS model and the results are compared with those obtained from qualitatively critical resolved shear stress model (CRSS). The result demonstrates that this finite element model not only predicts a similar pattern of dislocation generation with the CRSS model but also anticipate the dislocation density quantity generated in the Si ingot. A modified cooling process is also employed to study the effect of the cooling process on the generation of the dislocation. It clearly shows that dislocation density is drastically decreased by modifying the cooling process. The results obtained from this model can provide valuable information for engineers to design a better cooling process for reducing the dislocation density produced in the Si ingot under the crystal growth process. Published version 2020-06-17T08:10:03Z 2020-06-17T08:10:03Z 2019 Journal Article Lin, M., Wu, X., Liao, X., Shi, M., Ou, D., & Tsai, C.-T. (2019). 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage. Materials, 12(17), 2783-. doi:10.3390/ma12172783 1996-1944 https://hdl.handle.net/10356/142229 10.3390/ma12172783 2-s2.0-85071868357 17 12 en Materials © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Hassen-sumino Model CRSS Model Lin, Maohua Wu, Xinjiang Liao, Xinqin Shi, Min Ou, Disheng Tsai, Chi-Tay 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title | 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title_full | 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title_fullStr | 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title_full_unstemmed | 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title_short | 3D viscoplastic finite element modeling of dislocation generation in a large size Si ingot of the directional solidification stage |
| title_sort | 3d viscoplastic finite element modeling of dislocation generation in a large size si ingot of the directional solidification stage |
| topic | Engineering::Electrical and electronic engineering Hassen-sumino Model CRSS Model |
| url | https://hdl.handle.net/10356/142229 |
| work_keys_str_mv | AT linmaohua 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage AT wuxinjiang 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage AT liaoxinqin 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage AT shimin 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage AT oudisheng 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage AT tsaichitay 3dviscoplasticfiniteelementmodelingofdislocationgenerationinalargesizesiingotofthedirectionalsolidificationstage |