| Summary: | In this project, we investigated the growth and post-growth annealing treatment
of ZnO thin films, deposited by a home-made metal organic chemical vapor deposition
(MOCVD), which was set up with the support of this project. The growth of the ZnO
thin films was studied with various growth parameters and reactor designs. With the
first generation of MOCVD, the pre-reaction of precursors in gaseous phase has
greatly influenced the ZnO thin films deposited with the original reactor. In order to
obtain high quality film, the MOCVD reactor and growth process have been
systematically modified to eliminate the pre-reaction of the precursors. Using the
modified reactor and growth process, highly c-axis oriented polycrystalline ZnO thin
films were obtained.
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