P-type doping of zinc oxide by metal-organic chemical vapor deposition
In this project, we investigated the growth and post-growth annealing treatment of ZnO thin films, deposited by a home-made metal organic chemical vapor deposition (MOCVD), which was set up with the support of this project. The growth of the ZnO thin films was studied with various growth paramete...
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| Other Authors: | |
| Format: | Research Report |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/14235 |
| _version_ | 1826109793727676416 |
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| author | Sun, Xiaowei. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Sun, Xiaowei. |
| author_sort | Sun, Xiaowei. |
| collection | NTU |
| description | In this project, we investigated the growth and post-growth annealing treatment
of ZnO thin films, deposited by a home-made metal organic chemical vapor deposition
(MOCVD), which was set up with the support of this project. The growth of the ZnO
thin films was studied with various growth parameters and reactor designs. With the
first generation of MOCVD, the pre-reaction of precursors in gaseous phase has
greatly influenced the ZnO thin films deposited with the original reactor. In order to
obtain high quality film, the MOCVD reactor and growth process have been
systematically modified to eliminate the pre-reaction of the precursors. Using the
modified reactor and growth process, highly c-axis oriented polycrystalline ZnO thin
films were obtained. |
| first_indexed | 2024-10-01T02:24:12Z |
| format | Research Report |
| id | ntu-10356/14235 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T02:24:12Z |
| publishDate | 2008 |
| record_format | dspace |
| spelling | ntu-10356/142352023-03-04T03:19:12Z P-type doping of zinc oxide by metal-organic chemical vapor deposition Sun, Xiaowei. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films In this project, we investigated the growth and post-growth annealing treatment of ZnO thin films, deposited by a home-made metal organic chemical vapor deposition (MOCVD), which was set up with the support of this project. The growth of the ZnO thin films was studied with various growth parameters and reactor designs. With the first generation of MOCVD, the pre-reaction of precursors in gaseous phase has greatly influenced the ZnO thin films deposited with the original reactor. In order to obtain high quality film, the MOCVD reactor and growth process have been systematically modified to eliminate the pre-reaction of the precursors. Using the modified reactor and growth process, highly c-axis oriented polycrystalline ZnO thin films were obtained. 2008-11-06T06:33:55Z 2008-11-06T06:33:55Z 2007 2007 Research Report http://hdl.handle.net/10356/14235 en 84 p. application/pdf |
| spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Sun, Xiaowei. P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title | P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title_full | P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title_fullStr | P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title_full_unstemmed | P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title_short | P-type doping of zinc oxide by metal-organic chemical vapor deposition |
| title_sort | p type doping of zinc oxide by metal organic chemical vapor deposition |
| topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films |
| url | http://hdl.handle.net/10356/14235 |
| work_keys_str_mv | AT sunxiaowei ptypedopingofzincoxidebymetalorganicchemicalvapordeposition |