Development of electrical, electronic & information system
SOI technologies offer solutions to low power, high performance applications. The key device-architecture issue is the choice between partially depleted and fully depleted devices. While each structure has pros and cons, the choice needs to be balanced between process complexity and performance. The...
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Format: | Research Report |
Language: | English |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/14242 |
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author | Gwee, Bah Hwee. Sng, Kenneth Eng Kian. So, Ping Lam. |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Gwee, Bah Hwee. Sng, Kenneth Eng Kian. So, Ping Lam. |
author_sort | Gwee, Bah Hwee. |
collection | NTU |
description | SOI technologies offer solutions to low power, high performance applications. The key device-architecture issue is the choice between partially depleted and fully depleted devices. While each structure has pros and cons, the choice needs to be balanced between process complexity and performance. Thereafter, engineers have ventured into some non-classical transistor structures will likely take over due to their delivery of higher performance with lower leakage than traditional scaled SOI CMOS approaches. The possibility of using a back gate have sparked a large research activity in the field of novel SOI devices. Among all other multiple gate design, it is well known that Gate-All-Around (GAA) MOSFET offers the most attractive properties for digital application. GAA MOSFET is being examined as extension of planar CMOS technology with potential to increase performance and packing density over the conventional technique. |
first_indexed | 2024-10-01T06:56:12Z |
format | Research Report |
id | ntu-10356/14242 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T06:56:12Z |
publishDate | 2008 |
record_format | dspace |
spelling | ntu-10356/142422023-03-04T03:23:29Z Development of electrical, electronic & information system Gwee, Bah Hwee. Sng, Kenneth Eng Kian. So, Ping Lam. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic systems SOI technologies offer solutions to low power, high performance applications. The key device-architecture issue is the choice between partially depleted and fully depleted devices. While each structure has pros and cons, the choice needs to be balanced between process complexity and performance. Thereafter, engineers have ventured into some non-classical transistor structures will likely take over due to their delivery of higher performance with lower leakage than traditional scaled SOI CMOS approaches. The possibility of using a back gate have sparked a large research activity in the field of novel SOI devices. Among all other multiple gate design, it is well known that Gate-All-Around (GAA) MOSFET offers the most attractive properties for digital application. GAA MOSFET is being examined as extension of planar CMOS technology with potential to increase performance and packing density over the conventional technique. 2008-11-06T08:15:10Z 2008-11-06T08:15:10Z 2007 2007 Research Report http://hdl.handle.net/10356/14242 en 134 p. application/pdf |
spellingShingle | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems Gwee, Bah Hwee. Sng, Kenneth Eng Kian. So, Ping Lam. Development of electrical, electronic & information system |
title | Development of electrical, electronic & information system |
title_full | Development of electrical, electronic & information system |
title_fullStr | Development of electrical, electronic & information system |
title_full_unstemmed | Development of electrical, electronic & information system |
title_short | Development of electrical, electronic & information system |
title_sort | development of electrical electronic information system |
topic | DRNTU::Engineering::Electrical and electronic engineering::Electronic systems |
url | http://hdl.handle.net/10356/14242 |
work_keys_str_mv | AT gweebahhwee developmentofelectricalelectronicinformationsystem AT sngkennethengkian developmentofelectricalelectronicinformationsystem AT sopinglam developmentofelectricalelectronicinformationsystem |