Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias
Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Online Access: | https://hdl.handle.net/10356/142599 |
| _version_ | 1826117110278914048 |
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| author | Lin, Ye Tan, Chuan Seng |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lin, Ye Tan, Chuan Seng |
| author_sort | Lin, Ye |
| collection | NTU |
| description | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel emission, and Fowler-Nordheim tunneling have been identified for these samples, respectively. Self-consistent parameters are extracted through the analysis of leakage current conduction mechanisms: (1) optical dielectric constant (1.98-3.69), and (2) Schottky barrier height (1.66-2.21 eV). In terms of leakage current density, the ALD process is preferred over the sputtering process during the fabrication because the sputtered electrodes result in more traps in the vertical dielectric layers. |
| first_indexed | 2024-10-01T04:22:22Z |
| format | Journal Article |
| id | ntu-10356/142599 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T04:22:22Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1425992020-10-13T00:55:36Z Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias Lin, Ye Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering MIM Capacitor ALD Samples Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel emission, and Fowler-Nordheim tunneling have been identified for these samples, respectively. Self-consistent parameters are extracted through the analysis of leakage current conduction mechanisms: (1) optical dielectric constant (1.98-3.69), and (2) Schottky barrier height (1.66-2.21 eV). In terms of leakage current density, the ALD process is preferred over the sputtering process during the fabrication because the sputtered electrodes result in more traps in the vertical dielectric layers. Agency for Science, Technology and Research (A*STAR) Accepted version This work is supported by Agency for Science, Technology and Research (A*STAR) under Individual Research Grant No. A1783c0004. 2020-06-25T04:16:35Z 2020-06-25T04:16:35Z 2018 Journal Article Lin, Y., & Tan, C. S. (2018). Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias. Japanese Journal of Applied Physics, 57(7S2), 07MF01-. doi:10.7567/JJAP.57.07MF01 0021-4922 https://hdl.handle.net/10356/142599 10.7567/JJAP.57.07MF01 2-s2.0-85049371680 7S2 57 en A1783c0004 Japanese Journal of Applied Physics © 2018 The Japan Society of Applied Physics. All rights reserved. This paper was published in Japanese Journal of Applied Physics and is made available with permission of The Japan Society of Applied Physics. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering MIM Capacitor ALD Samples Lin, Ye Tan, Chuan Seng Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title_full | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title_fullStr | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title_full_unstemmed | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title_short | Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias |
| title_sort | leakage current conduction mechanism of three dimensional capacitors embedded in through silicon vias |
| topic | Engineering::Electrical and electronic engineering MIM Capacitor ALD Samples |
| url | https://hdl.handle.net/10356/142599 |
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