Characterization of sic power devices for dualactive bridge converter
Double pulse testers are required for extraction of switching energies and waveforms of power devices. With the increasing adoption of wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) comes an increasing need for the creation of double pulse testers and associated pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference Paper |
| Language: | English |
| Published: |
2020
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| Online Access: | https://hdl.handle.net/10356/142860 |
| _version_ | 1826129078210527232 |
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| author | Li, Yeo Howe Kanamarlapudi, Venkata Ravi Kishore |
| author2 | 2017 Asian Conference on Energy, Power and Transportation Electrification |
| author_facet | 2017 Asian Conference on Energy, Power and Transportation Electrification Li, Yeo Howe Kanamarlapudi, Venkata Ravi Kishore |
| author_sort | Li, Yeo Howe |
| collection | NTU |
| description | Double pulse testers are required for extraction of switching energies and waveforms of power devices. With the increasing adoption of wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) comes an increasing need for the creation of double pulse testers and associated procedures capable of testing fast switching speeds. To date, many papers involving double pulse test setups have been published. However, these papers tend to focus on the results of the characterisation rather than the technical aspects of the experimental setup itself. In this paper, the characterisation procedure and practical considerations of a double pulse tester are presented in detail. Practical considerations involving the testing of fast switches like SiC MOSFETs are also reviewed and highlighted. |
| first_indexed | 2024-10-01T07:34:51Z |
| format | Conference Paper |
| id | ntu-10356/142860 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:34:51Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1428602021-01-06T08:34:51Z Characterization of sic power devices for dualactive bridge converter Li, Yeo Howe Kanamarlapudi, Venkata Ravi Kishore 2017 Asian Conference on Energy, Power and Transportation Electrification Energy Research Institute @ NTU (ERI@N) Engineering::Electrical and electronic engineering Double Pulse Tester Silicon Carbide Schottky Diode Double pulse testers are required for extraction of switching energies and waveforms of power devices. With the increasing adoption of wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN) comes an increasing need for the creation of double pulse testers and associated procedures capable of testing fast switching speeds. To date, many papers involving double pulse test setups have been published. However, these papers tend to focus on the results of the characterisation rather than the technical aspects of the experimental setup itself. In this paper, the characterisation procedure and practical considerations of a double pulse tester are presented in detail. Practical considerations involving the testing of fast switches like SiC MOSFETs are also reviewed and highlighted. Accepted version 2020-07-06T03:47:03Z 2020-07-06T03:47:03Z 2017 Conference Paper Li, Y. H., & Kanamarlapudi, V. R. K. (2017). Characterization of sic power devices for dualactive bridge converter. 2017 Asian Conference on Energy, Power and Transportation Electrification. doi:10.1109/ACEPT.2017.8168592 9781538609712 https://hdl.handle.net/10356/142860 10.1109/ACEPT.2017.8168592 2-s2.0-85045966842 en © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/ACEPT.2017.8168592. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Double Pulse Tester Silicon Carbide Schottky Diode Li, Yeo Howe Kanamarlapudi, Venkata Ravi Kishore Characterization of sic power devices for dualactive bridge converter |
| title | Characterization of sic power devices for dualactive bridge converter |
| title_full | Characterization of sic power devices for dualactive bridge converter |
| title_fullStr | Characterization of sic power devices for dualactive bridge converter |
| title_full_unstemmed | Characterization of sic power devices for dualactive bridge converter |
| title_short | Characterization of sic power devices for dualactive bridge converter |
| title_sort | characterization of sic power devices for dualactive bridge converter |
| topic | Engineering::Electrical and electronic engineering Double Pulse Tester Silicon Carbide Schottky Diode |
| url | https://hdl.handle.net/10356/142860 |
| work_keys_str_mv | AT liyeohowe characterizationofsicpowerdevicesfordualactivebridgeconverter AT kanamarlapudivenkataravikishore characterizationofsicpowerdevicesfordualactivebridgeconverter |