A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator

A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator

We present a novel readout circuit for a ferromagnetic Hall cross-bar based random number generator. The random orientation of magnetic domains are result of anomalous Hall-effect. These ferromagnetic Hall cross-bar structures can be integrated with the read out circuit to form a plug and play rando...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Narasimman, Govind, Basu, Joydeep, Sethi, Pankaj, Krishnia, Sachin, Yi, Chen, Lew, Wen Siang, Basu, Arindam
Rannpháirtithe: School of Electrical and Electronic Engineering
Formáid: Journal Article
Teanga:English
Foilsithe / Cruthaithe: 2020
Ábhair:
Engineering::Electrical and electronic engineering
Random Number Generation
Low-power Electronics
Rochtain ar líne:https://hdl.handle.net/10356/143334

Ar líne

https://hdl.handle.net/10356/143334

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