High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at -1 V. A germanium-on-insulator (GOI) platform with a 200-mm wafer scale was realized for photodetector fabrication via direct wafer bonding and layer transfer techniques, followed by oxyge...

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Bibliographic Details
Main Authors: Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Wang, Yue, Wu, Shaoteng, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Germanium
Photodetector
Online Access:https://hdl.handle.net/10356/143501

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