Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures
We demonstrate spin-orbit torque (SOT) driven multi-state magnetization switching in Co/Pt Hall crosses in the presence of varying externally applied in-plane fields from room temperature (RT = 295 K) to 360 K. In-situ Kerr imaging at various resistance states reveal the evolution of up and down mag...
| Main Authors: | , , , , |
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| Format: | Journal Article |
| Language: | English |
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2020
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| Online Access: | https://hdl.handle.net/10356/143525 |
| _version_ | 1811687223512268800 |
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| author | Lim, Gerard Joseph Gan, Weiliang Law, Wai Cheung Murapaka, Chandrasekhar Lew, Wen Siang |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Lim, Gerard Joseph Gan, Weiliang Law, Wai Cheung Murapaka, Chandrasekhar Lew, Wen Siang |
| author_sort | Lim, Gerard Joseph |
| collection | NTU |
| description | We demonstrate spin-orbit torque (SOT) driven multi-state magnetization switching in Co/Pt Hall crosses in the presence of varying externally applied in-plane fields from room temperature (RT = 295 K) to 360 K. In-situ Kerr imaging at various resistance states reveal the evolution of up and down magnetic domain expansion due to current-induced SOT switching. The control of magnetization states in the Hall cross is shown to be attributed to the non-uniform current-density and the resultant effective out-of-plane field due to the device geometry. The critical switching current density scales inversely with device temperature, and the SOT-driven change in Hall resistance varies across device temperatures and the applied in-plane fields. Additionally, the current-induced SOT efficiency, χsat, and the Dzyaloshinskii-Moriya interaction effective field, HDMI, at RT and 360 K are determined using the chiral domain wall model and current-induced loop-shift method. The χsat and HDMI values are found to decrease by ~15% and ~26%, respectively, with increasing device temperature. These results demonstrate the thermal sensitivity of current-induced SOT magnetization switching in multi-state devices. |
| first_indexed | 2024-10-01T05:12:54Z |
| format | Journal Article |
| id | ntu-10356/143525 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T05:12:54Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1435252023-02-28T19:25:22Z Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures Lim, Gerard Joseph Gan, Weiliang Law, Wai Cheung Murapaka, Chandrasekhar Lew, Wen Siang School of Physical and Mathematical Sciences Science Spintronics Domain Walls We demonstrate spin-orbit torque (SOT) driven multi-state magnetization switching in Co/Pt Hall crosses in the presence of varying externally applied in-plane fields from room temperature (RT = 295 K) to 360 K. In-situ Kerr imaging at various resistance states reveal the evolution of up and down magnetic domain expansion due to current-induced SOT switching. The control of magnetization states in the Hall cross is shown to be attributed to the non-uniform current-density and the resultant effective out-of-plane field due to the device geometry. The critical switching current density scales inversely with device temperature, and the SOT-driven change in Hall resistance varies across device temperatures and the applied in-plane fields. Additionally, the current-induced SOT efficiency, χsat, and the Dzyaloshinskii-Moriya interaction effective field, HDMI, at RT and 360 K are determined using the chiral domain wall model and current-induced loop-shift method. The χsat and HDMI values are found to decrease by ~15% and ~26%, respectively, with increasing device temperature. These results demonstrate the thermal sensitivity of current-induced SOT magnetization switching in multi-state devices. Agency for Science, Technology and Research (A*STAR) National Research Foundation (NRF) Accepted version The work was supported by the Singapore National Research Foundation, under a Competitive Research Programme (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices, NRF-CRP9-2011-01), and an Industry-IHL Partnership Program (NRF2015- IIP001-001). The support from an RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030) is also acknowledged. 2020-09-07T07:37:59Z 2020-09-07T07:37:59Z 2020 Journal Article Lim, G. J., Gan, W., Law, W. C., Murapaka, C., & Lew, W. S. (2020). Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures. Journal of Magnetism and Magnetic Materials, 514, 167201-. doi:10.1016/j.jmmm.2020.167201 0304-8853 https://hdl.handle.net/10356/143525 10.1016/j.jmmm.2020.167201 514 167201 en Journal of Magnetism and Magnetic Materials © 2020 Elsevier. All rights reserved. This paper was published in Journal of Magnetism and Magnetic Materials and is made available with permission of Elsevier. application/pdf |
| spellingShingle | Science Spintronics Domain Walls Lim, Gerard Joseph Gan, Weiliang Law, Wai Cheung Murapaka, Chandrasekhar Lew, Wen Siang Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title | Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title_full | Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title_fullStr | Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title_full_unstemmed | Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title_short | Spin-orbit torque induced multi-state magnetization switching in Co/Pt Hall cross structures at elevated temperatures |
| title_sort | spin orbit torque induced multi state magnetization switching in co pt hall cross structures at elevated temperatures |
| topic | Science Spintronics Domain Walls |
| url | https://hdl.handle.net/10356/143525 |
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