Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/143567 |
| _version_ | 1811696052269481984 |
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| author | Nedeljkovic, Milos Littlejohns, Callum George Khokhar, Ali Z. Banakar, Mehdi Cao, Wei Penades, Jordi Soler Tran, David T. Gardes, Frederic Y. Thomson, David J. Reed, Graham T. Wang, Hong Mashanovich, Goran Z. |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Nedeljkovic, Milos Littlejohns, Callum George Khokhar, Ali Z. Banakar, Mehdi Cao, Wei Penades, Jordi Soler Tran, David T. Gardes, Frederic Y. Thomson, David J. Reed, Graham T. Wang, Hong Mashanovich, Goran Z. |
| author_sort | Nedeljkovic, Milos |
| collection | NTU |
| description | Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s. |
| first_indexed | 2024-10-01T07:33:14Z |
| format | Journal Article |
| id | ntu-10356/143567 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:33:14Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1435672020-09-09T06:50:01Z Silicon-on-insulator free-carrier injection modulators for the mid-infrared Nedeljkovic, Milos Littlejohns, Callum George Khokhar, Ali Z. Banakar, Mehdi Cao, Wei Penades, Jordi Soler Tran, David T. Gardes, Frederic Y. Thomson, David J. Reed, Graham T. Wang, Hong Mashanovich, Goran Z. School of Electrical and Electronic Engineering Silicon Technologies Centre of Excellence Engineering::Electrical and electronic engineering Electromagnetic Wave Attenuation Modulation Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a VπLπ of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s. National Research Foundation (NRF) Published version 2020-09-09T06:50:01Z 2020-09-09T06:50:01Z 2019 Journal Article Nedeljkovic, M., Littlejohns, C. G., Khokhar, A. Z., Banakar, M., Cao, W., Penades, J. S., . . . Mashanovich, G. Z. (2019). Silicon-on-insulator free-carrier injection modulators for the mid-infrared. Optics Letters, 44(4), 915-918. doi:10.1364/OL.44.000915 0146-9592 https://hdl.handle.net/10356/143567 10.1364/OL.44.000915 30768019 4 44 915 918 en Optics Letters © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Electromagnetic Wave Attenuation Modulation Nedeljkovic, Milos Littlejohns, Callum George Khokhar, Ali Z. Banakar, Mehdi Cao, Wei Penades, Jordi Soler Tran, David T. Gardes, Frederic Y. Thomson, David J. Reed, Graham T. Wang, Hong Mashanovich, Goran Z. Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title | Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title_full | Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title_fullStr | Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title_full_unstemmed | Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title_short | Silicon-on-insulator free-carrier injection modulators for the mid-infrared |
| title_sort | silicon on insulator free carrier injection modulators for the mid infrared |
| topic | Engineering::Electrical and electronic engineering Electromagnetic Wave Attenuation Modulation |
| url | https://hdl.handle.net/10356/143567 |
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