Direct metal to metal bonding method for heterogenous 3D integration
Metal-based bonding will create vertical electrical connections between the dies and simultaneously create strong mechanical strength and hermetic sealing allowing heterogeneous 3D integration and 3D packaging. In this study, Cu-Cu fusion bonding with plasma surface modification and Al-Au thermoc...
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| Other Authors: | |
| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
| Published: |
Nanyang Technological University
2020
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| Online Access: | https://hdl.handle.net/10356/143627 |
| _version_ | 1811692186884898816 |
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| author | Chua, Shen Lin |
| author2 | Tan, Chuan Seng |
| author_facet | Tan, Chuan Seng Chua, Shen Lin |
| author_sort | Chua, Shen Lin |
| collection | NTU |
| description | Metal-based bonding will create vertical electrical connections between the dies and
simultaneously create strong mechanical strength and hermetic sealing allowing
heterogeneous 3D integration and 3D packaging. In this study, Cu-Cu fusion bonding with
plasma surface modification and Al-Au thermocompression bonding were studied for
reducing interconnect length, reducing pitch and increasing bandwidth for connection
between top and bottom dies. Both methods of bonding used bonding and post-annealing
temperature 300 ºC or less which is suitable for CMOS dies. Both methods also required
shorter bonding time compared to Cu-Cu thermocompression while enabling batch
annealing. Shear strength, electrical properties and hermetic sealing were investigated
and demonstrated for enabling 3D integration and 3D packaging. Molecular structure and
elemental composition for both methods of bonding were also studied and no voids were
observed. Temperature cycling test from -40 to 125 ºC for 1,000 cycles were performed
for Cu-Cu fusion bonding and mechanical shock test at 503.55g for 1.03 ms repeated 10
times were performed for Al-Au bonded samples to investigate bonding reliability. |
| first_indexed | 2024-10-01T06:31:47Z |
| format | Thesis-Doctor of Philosophy |
| id | ntu-10356/143627 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:31:47Z |
| publishDate | 2020 |
| publisher | Nanyang Technological University |
| record_format | dspace |
| spelling | ntu-10356/1436272023-07-04T17:16:57Z Direct metal to metal bonding method for heterogenous 3D integration Chua, Shen Lin Tan, Chuan Seng School of Electrical and Electronic Engineering TanCS@ntu.edu.sg Engineering::Electrical and electronic engineering Metal-based bonding will create vertical electrical connections between the dies and simultaneously create strong mechanical strength and hermetic sealing allowing heterogeneous 3D integration and 3D packaging. In this study, Cu-Cu fusion bonding with plasma surface modification and Al-Au thermocompression bonding were studied for reducing interconnect length, reducing pitch and increasing bandwidth for connection between top and bottom dies. Both methods of bonding used bonding and post-annealing temperature 300 ºC or less which is suitable for CMOS dies. Both methods also required shorter bonding time compared to Cu-Cu thermocompression while enabling batch annealing. Shear strength, electrical properties and hermetic sealing were investigated and demonstrated for enabling 3D integration and 3D packaging. Molecular structure and elemental composition for both methods of bonding were also studied and no voids were observed. Temperature cycling test from -40 to 125 ºC for 1,000 cycles were performed for Cu-Cu fusion bonding and mechanical shock test at 503.55g for 1.03 ms repeated 10 times were performed for Al-Au bonded samples to investigate bonding reliability. Doctor of Philosophy 2020-09-15T01:31:05Z 2020-09-15T01:31:05Z 2019 Thesis-Doctor of Philosophy Chua, S. L. (2020). Direct metal to metal bonding method for heterogenous 3D integration. Doctoral thesis, Nanyang Technological University, Singapore https://hdl.handle.net/10356/143627 10.32657/10356/143627 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University |
| spellingShingle | Engineering::Electrical and electronic engineering Chua, Shen Lin Direct metal to metal bonding method for heterogenous 3D integration |
| title | Direct metal to metal bonding method for heterogenous 3D integration |
| title_full | Direct metal to metal bonding method for heterogenous 3D integration |
| title_fullStr | Direct metal to metal bonding method for heterogenous 3D integration |
| title_full_unstemmed | Direct metal to metal bonding method for heterogenous 3D integration |
| title_short | Direct metal to metal bonding method for heterogenous 3D integration |
| title_sort | direct metal to metal bonding method for heterogenous 3d integration |
| topic | Engineering::Electrical and electronic engineering |
| url | https://hdl.handle.net/10356/143627 |
| work_keys_str_mv | AT chuashenlin directmetaltometalbondingmethodforheterogenous3dintegration |