A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...
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| Formáid: | Journal Article |
| Teanga: | English |
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2020
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| Rochtain ar líne: | https://hdl.handle.net/10356/143634 |
| _version_ | 1826128991121047552 |
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| author | Zheng, Y. Agrawal, Manvi Dharmarasu, Nethaji Radhakrishnan, K. Patwal, Shashank |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Zheng, Y. Agrawal, Manvi Dharmarasu, Nethaji Radhakrishnan, K. Patwal, Shashank |
| author_sort | Zheng, Y. |
| collection | NTU |
| description | The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation layer allows the migration of Ga metal into Si, leading to the interdiffusion. The presence of less Ga at the GaN/AlN interface and the two-step growth process of AlN with different column sizes on the top and bottom AlN completely eliminates the possibility of Ga–Si interdiffusion. Alternatively, a thin silicon nitride as a nucleation layer for the growth of (Al) GaN layers was also found to prevent the Ga–Si interdiffusion thereby circumventing the process of melt-back etching. |
| first_indexed | 2024-10-01T07:33:52Z |
| format | Journal Article |
| id | ntu-10356/143634 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:33:52Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1436342021-02-03T07:41:27Z A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy Zheng, Y. Agrawal, Manvi Dharmarasu, Nethaji Radhakrishnan, K. Patwal, Shashank School of Electrical and Electronic Engineering Center for Micro/Nano-electronics (NOVITAS) Temasek Laboratories Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation layer allows the migration of Ga metal into Si, leading to the interdiffusion. The presence of less Ga at the GaN/AlN interface and the two-step growth process of AlN with different column sizes on the top and bottom AlN completely eliminates the possibility of Ga–Si interdiffusion. Alternatively, a thin silicon nitride as a nucleation layer for the growth of (Al) GaN layers was also found to prevent the Ga–Si interdiffusion thereby circumventing the process of melt-back etching. Ministry of Education (MOE) Accepted version The authors gratefully acknowledge the funding support from Ministry of Education, Singapore (MOE 2017-T1-001-200). 2020-09-15T03:25:56Z 2020-09-15T03:25:56Z 2019 Journal Article Zheng, Y., Agrawal, M., Dharmarasu, N., Radhakrishnan, K., & Patwal, S. (2019). A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy. Applied Surface Science, 481, 319-326. doi:10.1016/j.apsusc.2019.03.046 0169-4332 https://hdl.handle.net/10356/143634 10.1016/j.apsusc.2019.03.046 481 319 326 en Applied Surface Science © 2019 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate Zheng, Y. Agrawal, Manvi Dharmarasu, Nethaji Radhakrishnan, K. Patwal, Shashank A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title | A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title_full | A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title_fullStr | A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title_full_unstemmed | A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title_short | A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy |
| title_sort | study on ga si interdiffusion during al gan aln growth on si by plasma assisted molecular beam epitaxy |
| topic | Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate |
| url | https://hdl.handle.net/10356/143634 |
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