A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...

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Main Authors: Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
Other Authors: School of Electrical and Electronic Engineering
Format: Journal Article
Language:English
Published: 2020
Subjects:
Online Access:https://hdl.handle.net/10356/143634
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author Zheng, Y.
Agrawal, Manvi
Dharmarasu, Nethaji
Radhakrishnan, K.
Patwal, Shashank
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zheng, Y.
Agrawal, Manvi
Dharmarasu, Nethaji
Radhakrishnan, K.
Patwal, Shashank
author_sort Zheng, Y.
collection NTU
description The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation layer allows the migration of Ga metal into Si, leading to the interdiffusion. The presence of less Ga at the GaN/AlN interface and the two-step growth process of AlN with different column sizes on the top and bottom AlN completely eliminates the possibility of Ga–Si interdiffusion. Alternatively, a thin silicon nitride as a nucleation layer for the growth of (Al) GaN layers was also found to prevent the Ga–Si interdiffusion thereby circumventing the process of melt-back etching.
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spelling ntu-10356/1436342021-02-03T07:41:27Z A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy Zheng, Y. Agrawal, Manvi Dharmarasu, Nethaji Radhakrishnan, K. Patwal, Shashank School of Electrical and Electronic Engineering Center for Micro/Nano-electronics (NOVITAS) Temasek Laboratories Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation layer allows the migration of Ga metal into Si, leading to the interdiffusion. The presence of less Ga at the GaN/AlN interface and the two-step growth process of AlN with different column sizes on the top and bottom AlN completely eliminates the possibility of Ga–Si interdiffusion. Alternatively, a thin silicon nitride as a nucleation layer for the growth of (Al) GaN layers was also found to prevent the Ga–Si interdiffusion thereby circumventing the process of melt-back etching. Ministry of Education (MOE) Accepted version The authors gratefully acknowledge the funding support from Ministry of Education, Singapore (MOE 2017-T1-001-200). 2020-09-15T03:25:56Z 2020-09-15T03:25:56Z 2019 Journal Article Zheng, Y., Agrawal, M., Dharmarasu, N., Radhakrishnan, K., & Patwal, S. (2019). A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy. Applied Surface Science, 481, 319-326. doi:10.1016/j.apsusc.2019.03.046 0169-4332 https://hdl.handle.net/10356/143634 10.1016/j.apsusc.2019.03.046 481 319 326 en Applied Surface Science © 2019 Elsevier B.V. All rights reserved. This paper was published in Applied Surface Science and is made available with permission of Elsevier B.V. application/pdf
spellingShingle Engineering::Electrical and electronic engineering
III-nitrides Growth
Si Substrate
Zheng, Y.
Agrawal, Manvi
Dharmarasu, Nethaji
Radhakrishnan, K.
Patwal, Shashank
A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title_full A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title_fullStr A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title_full_unstemmed A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title_short A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
title_sort study on ga si interdiffusion during al gan aln growth on si by plasma assisted molecular beam epitaxy
topic Engineering::Electrical and electronic engineering
III-nitrides Growth
Si Substrate
url https://hdl.handle.net/10356/143634
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