A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

A study on Ga – Si interdiffusion during (Al)GaN/AlN growth on Si by plasma assisted molecular beam epitaxy

The Ga–Si interdiffusion during (Al)GaN/AlN growth on Si substrate by plasma assisted molecular beam epitaxy (PA-MBE) is studied. The epilayers were grown using a combination of different III/V ratios for GaN and AlN layers. The columnar morphology of the nitrogen-rich (III/V < 1) AlN nucleation...

Bibliográfalaš dieđut
Váldodahkkit:	Zheng, Y., Agrawal, Manvi, Dharmarasu, Nethaji, Radhakrishnan, K., Patwal, Shashank
Eará dahkkit:	School of Electrical and Electronic Engineering
Materiálatiipa:	Journal Article
Giella:	English
Almmustuhtton:	2020
Fáttát:	Engineering::Electrical and electronic engineering III-nitrides Growth Si Substrate
Liŋkkat:	https://hdl.handle.net/10356/143634

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