Theoretical design of mid-infrared interband cascade lasers in SiGeSn system
By carefully analyzing the latest composition-dependent parameters of SiGeSn alloys, we come to realize that this system could provide type-II energy band alignment at direct bandgap condition. The discovery inspires us to explore the mid-infrared interband cascade laser (ICL) in SiGeSn system. Base...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
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2020
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| Online Access: | https://hdl.handle.net/10356/143723 |
| _version_ | 1811697617581637632 |
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| author | Li, Yuan Song, Zhigang Li, Zeyu Sun, Greg Tan, Chuan Seng Fan, Weijun Wang, Qi Jie |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Li, Yuan Song, Zhigang Li, Zeyu Sun, Greg Tan, Chuan Seng Fan, Weijun Wang, Qi Jie |
| author_sort | Li, Yuan |
| collection | NTU |
| description | By carefully analyzing the latest composition-dependent parameters of SiGeSn alloys, we come to realize that this system could provide type-II energy band alignment at direct bandgap condition. The discovery inspires us to explore the mid-infrared interband cascade laser (ICL) in SiGeSn system. Based on the eight-band k ⋅ p model, we theoretically design three schemes of ICL, in which the active region and the carrier injectors are optimized simultaneously. Afterward, the properties of TE-mode optical gain spectrums and differential gain are investigated individually for each scheme. Furthermore, the spontaneous emission spectrums and radiative current density are also calculated. Our theoretical results indicate that the active region composed of double-electron and triple-hole quantum wells has the best gain performance, reaching 660 cm−1 for a single period of the ICL under 7.8 × 1018 cm−3 injected electron density. This work opens up another type of infrared lasers that can be developed from the group-IV system, offering a new pathway to achieving the monolithic integration in Si photonics. |
| first_indexed | 2024-10-01T07:58:06Z |
| format | Journal Article |
| id | ntu-10356/143723 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T07:58:06Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1437232020-09-21T02:02:15Z Theoretical design of mid-infrared interband cascade lasers in SiGeSn system Li, Yuan Song, Zhigang Li, Zeyu Sun, Greg Tan, Chuan Seng Fan, Weijun Wang, Qi Jie School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Photonics Interband Cascade Laser By carefully analyzing the latest composition-dependent parameters of SiGeSn alloys, we come to realize that this system could provide type-II energy band alignment at direct bandgap condition. The discovery inspires us to explore the mid-infrared interband cascade laser (ICL) in SiGeSn system. Based on the eight-band k ⋅ p model, we theoretically design three schemes of ICL, in which the active region and the carrier injectors are optimized simultaneously. Afterward, the properties of TE-mode optical gain spectrums and differential gain are investigated individually for each scheme. Furthermore, the spontaneous emission spectrums and radiative current density are also calculated. Our theoretical results indicate that the active region composed of double-electron and triple-hole quantum wells has the best gain performance, reaching 660 cm−1 for a single period of the ICL under 7.8 × 1018 cm−3 injected electron density. This work opens up another type of infrared lasers that can be developed from the group-IV system, offering a new pathway to achieving the monolithic integration in Si photonics. Ministry of Education (MOE) National Research Foundation (NRF) Published version This work is supported by the funding from Singapore National Research Foundation, Competitive Research Program (NRF-CRP19-2017-01). Greg Sun acknowledges the support from Air Force Office of Scientific Research (FA9550-19-1-0341). WJ Fan acknowledges the National Supercomputing Center of Singapore for the calculation resource support. Ministry of Education, Singapore grant (MOE2016-T2-2-159, MOE2018-T2-1-176) 2020-09-21T01:57:55Z 2020-09-21T01:57:55Z 2020 Journal Article Li, Y., Song, Z., Li, Z., Sun, G., Tan, C. S., Fan, W., & Wang, Q. J. (2020). Theoretical design of mid-infrared interband cascade lasers in SiGeSn system. New Journal of Physics, 22. doi:10.1088/1367-2630/ab9c67 1367-2630 https://hdl.handle.net/10356/143723 10.1088/1367-2630/ab9c67 22 en NRF-CRP19-2017-01 MOE2016-T2-2-159 MOE2018-T2-1-176 New Journal of Physics © 2020 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Photonics Interband Cascade Laser Li, Yuan Song, Zhigang Li, Zeyu Sun, Greg Tan, Chuan Seng Fan, Weijun Wang, Qi Jie Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title | Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title_full | Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title_fullStr | Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title_full_unstemmed | Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title_short | Theoretical design of mid-infrared interband cascade lasers in SiGeSn system |
| title_sort | theoretical design of mid infrared interband cascade lasers in sigesn system |
| topic | Engineering::Electrical and electronic engineering Photonics Interband Cascade Laser |
| url | https://hdl.handle.net/10356/143723 |
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