Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition
Microwave ceramic with low‐sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low‐temperature sintering and good microwave dielectric properties, CaMgSi2O6–xLiF w...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144555 |
| _version_ | 1811691355671363584 |
|---|---|
| author | Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Huang, Xin Liang, Xiaofeng Zhang, Huaiwu Li, Yuanxun Huang, Ke Wang, Renshaw Xiao |
| author2 | School of Electrical and Electronic Engineering |
| author_facet | School of Electrical and Electronic Engineering Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Huang, Xin Liang, Xiaofeng Zhang, Huaiwu Li, Yuanxun Huang, Ke Wang, Renshaw Xiao |
| author_sort | Lai, Yuanming |
| collection | NTU |
| description | Microwave ceramic with low‐sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low‐temperature sintering and good microwave dielectric properties, CaMgSi2O6–xLiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi2O6 (x = 0) sintered at 1250°C, desirable microwave dielectric properties of εr = 7.45, Qf = 64 800 GHz, and τf = −34 ppm/°C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900°C when adding 2 wt% LiF into CaMgSi2O6. Furthermore, a secondary phase, Li2MgSiO4, occurred at x ≥ 1 wt%, and the densest microstructure was obtained at the x value of ~2 wt%. We propose that the high Qf value and the low‐sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg2SiO4 ceramic, our study demonstrates that the approach of adding LiF can realize low‐temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low‐temperature sintering of electronic ceramics. |
| first_indexed | 2024-10-01T06:18:35Z |
| format | Journal Article |
| id | ntu-10356/144555 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T06:18:35Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1445552023-02-28T19:21:42Z Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Huang, Xin Liang, Xiaofeng Zhang, Huaiwu Li, Yuanxun Huang, Ke Wang, Renshaw Xiao School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Engineering::Electrical and electronic engineering Microwave Ceramic Raman Spectra Microwave ceramic with low‐sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low‐temperature sintering and good microwave dielectric properties, CaMgSi2O6–xLiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi2O6 (x = 0) sintered at 1250°C, desirable microwave dielectric properties of εr = 7.45, Qf = 64 800 GHz, and τf = −34 ppm/°C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900°C when adding 2 wt% LiF into CaMgSi2O6. Furthermore, a secondary phase, Li2MgSiO4, occurred at x ≥ 1 wt%, and the densest microstructure was obtained at the x value of ~2 wt%. We propose that the high Qf value and the low‐sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg2SiO4 ceramic, our study demonstrates that the approach of adding LiF can realize low‐temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low‐temperature sintering of electronic ceramics. Ministry of Education (MOE) Accepted version Special Projects on Science and Technology of Guizhou Province, Grant/ Award Number: [2016]3011; National Key Research and Development Plan, Grant/Award Number: 2016YFA0300801; Academic Research Fund Tier 1 from Singapore Ministry of Education and Nanyang Assistant Professorship Grant, Grant/Award Number: RG108/17; Science and Technology Department of Sichuan Province, Grant/Award Number: 2015JQ0031, 2016JQ0016; National Natural Science Foundation of China, Grant/Award Number: 51772047, 61471096, 61771104 2020-11-12T03:59:24Z 2020-11-12T03:59:24Z 2018 Journal Article Lai, Y., Su, H., Wang, G., Tang, X., Huang, X., Liang, X., . . . Wang, R. X. (2018). Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition. Journal of the American Ceramic Society, 102, 1893–1903. doi:10.1111/jace.16086 0002-7820 https://hdl.handle.net/10356/144555 10.1111/jace.16086 102 1893 1903 en Journal of the American Ceramic Society © The American Ceramic Society 2018. This is the author's version of the work. It is posted here by permission of The American Ceramic Society for personal use, not for redistribution. The definitive version was published in the Journal of the American Ceramic Society, 102, 1893-1903. https://doi.org/10.1111/jace.16086 application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering Microwave Ceramic Raman Spectra Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Huang, Xin Liang, Xiaofeng Zhang, Huaiwu Li, Yuanxun Huang, Ke Wang, Renshaw Xiao Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title | Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title_full | Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title_fullStr | Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title_full_unstemmed | Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title_short | Low‐temperature sintering of microwave ceramics with highQfvalues through LiF addition |
| title_sort | low temperature sintering of microwave ceramics with highqfvalues through lif addition |
| topic | Engineering::Electrical and electronic engineering Microwave Ceramic Raman Spectra |
| url | https://hdl.handle.net/10356/144555 |
| work_keys_str_mv | AT laiyuanming lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT suhua lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT wanggang lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT tangxiaoli lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT huangxin lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT liangxiaofeng lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT zhanghuaiwu lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT liyuanxun lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT huangke lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition AT wangrenshawxiao lowtemperaturesinteringofmicrowaveceramicswithhighqfvaluesthroughlifaddition |