Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping
High-performance dielectric materials for microwave communication requires low dielectric constants (εr < 10), high quality factor (Qf) and near-zero temperature coefficient of resonance frequency (τf). However, CaMgSi2O6 ceramics typically exhibit low Qf and largely negative τf, despite its low...
| Main Authors: | , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144723 |
| _version_ | 1811679032567136256 |
|---|---|
| author | Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Liang, Xiaofeng Huang, Xin Li, Yuanxun Zhang, Huaiwu Ye, Chen Wang, Renshaw Xiao |
| author2 | School of Physical and Mathematical Sciences |
| author_facet | School of Physical and Mathematical Sciences Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Liang, Xiaofeng Huang, Xin Li, Yuanxun Zhang, Huaiwu Ye, Chen Wang, Renshaw Xiao |
| author_sort | Lai, Yuanming |
| collection | NTU |
| description | High-performance dielectric materials for microwave communication requires low dielectric constants (εr < 10), high quality factor (Qf) and near-zero temperature coefficient of resonance frequency (τf). However, CaMgSi2O6 ceramics typically exhibit low Qf and largely negative τf, despite its low εr. In this study, nominal composition CaMg1-xCuxSi2O6 (0 ≤ x ≤ 0.16) ceramics were synthesized via a solid-state reaction. Enhanced microwave dielectric properties were achieved in the x = 0.04 ceramic sintered at 1250 °C with εr = 7.41, Qf = 160 100 GHz (two times better than the previously reported values), and τf = −42 ppm/°C. Benefited from the optimal CuO doping, this enhancement in microwave dielectric property was realized by the contribution of order structure and the densification. Excess CuO doping, which can lead to a phase transition (from C2/c to P21/c), could degenerate the microwave dielectric properties of the CaMgSi2O6 ceramics. Considering the excellent microwave dielectric properties, the CuO-doped CaMgSi2O6 ceramic is a promising candidate material for microwave communication applications. |
| first_indexed | 2024-10-01T03:02:42Z |
| format | Journal Article |
| id | ntu-10356/144723 |
| institution | Nanyang Technological University |
| language | English |
| last_indexed | 2024-10-01T03:02:42Z |
| publishDate | 2020 |
| record_format | dspace |
| spelling | ntu-10356/1447232023-02-28T19:25:48Z Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Liang, Xiaofeng Huang, Xin Li, Yuanxun Zhang, Huaiwu Ye, Chen Wang, Renshaw Xiao School of Physical and Mathematical Sciences School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering CaMgSi2O6 Ceramic Microwave Dielectric Property High-performance dielectric materials for microwave communication requires low dielectric constants (εr < 10), high quality factor (Qf) and near-zero temperature coefficient of resonance frequency (τf). However, CaMgSi2O6 ceramics typically exhibit low Qf and largely negative τf, despite its low εr. In this study, nominal composition CaMg1-xCuxSi2O6 (0 ≤ x ≤ 0.16) ceramics were synthesized via a solid-state reaction. Enhanced microwave dielectric properties were achieved in the x = 0.04 ceramic sintered at 1250 °C with εr = 7.41, Qf = 160 100 GHz (two times better than the previously reported values), and τf = −42 ppm/°C. Benefited from the optimal CuO doping, this enhancement in microwave dielectric property was realized by the contribution of order structure and the densification. Excess CuO doping, which can lead to a phase transition (from C2/c to P21/c), could degenerate the microwave dielectric properties of the CaMgSi2O6 ceramics. Considering the excellent microwave dielectric properties, the CuO-doped CaMgSi2O6 ceramic is a promising candidate material for microwave communication applications. Ministry of Education (MOE) Accepted version This work was supported by National Natural Science Foundation of China under Grant Nos. 61771104, 61471096 and 51772047, Science and Technology Department of Sichuan Province 2016JQ0016 and 2015JQ0031, Special Projects on Science and Technology of Guizhou Province, China [2016]3011, Ministry of Science and Technology of China, China, National Key Research and Development Plan No. 2016YFA0300801. X.R.W. acknowledges supports from the Nanyang Assistant Professorship grant from Nanyang Technological University and Academic Research Fund Tier 1 (RG108/17S) from Singapore Ministry of Education, Singapore. 2020-11-20T07:26:27Z 2020-11-20T07:26:27Z 2019 Journal Article Lai, Y., Su, H., Wang, G., Tang, X., Liang, X., Huang, X., . . . Wang, R. X. (2019). Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping. Journal of Alloys and Compounds, 772, 40–48. doi:10.1016/j.jallcom.2018.09.059 0925-8388 https://hdl.handle.net/10356/144723 10.1016/j.jallcom.2018.09.059 772 40 48 en Journal of Alloys and Compounds © 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Alloys and Compounds and is made available with permission of Elsevier B.V. application/pdf |
| spellingShingle | Engineering::Electrical and electronic engineering CaMgSi2O6 Ceramic Microwave Dielectric Property Lai, Yuanming Su, Hua Wang, Gang Tang, Xiaoli Liang, Xiaofeng Huang, Xin Li, Yuanxun Zhang, Huaiwu Ye, Chen Wang, Renshaw Xiao Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title | Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title_full | Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title_fullStr | Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title_full_unstemmed | Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title_short | Improved microwave dielectric properties of CaMgSi2O6 ceramics through CuO doping |
| title_sort | improved microwave dielectric properties of camgsi2o6 ceramics through cuo doping |
| topic | Engineering::Electrical and electronic engineering CaMgSi2O6 Ceramic Microwave Dielectric Property |
| url | https://hdl.handle.net/10356/144723 |
| work_keys_str_mv | AT laiyuanming improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT suhua improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT wanggang improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT tangxiaoli improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT liangxiaofeng improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT huangxin improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT liyuanxun improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT zhanghuaiwu improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT yechen improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping AT wangrenshawxiao improvedmicrowavedielectricpropertiesofcamgsi2o6ceramicsthroughcuodoping |