Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS
This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power de...
Main Authors: | , , , , |
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Format: | Journal Article |
Language: | English |
Published: |
2020
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Online Access: | https://hdl.handle.net/10356/144725 |
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author | Li, Chenyang Boon, Chirn Chye Yi, Xiang Liang, Zhipeng Yang, Kaituo |
author2 | School of Electrical and Electronic Engineering |
author_facet | School of Electrical and Electronic Engineering Li, Chenyang Boon, Chirn Chye Yi, Xiang Liang, Zhipeng Yang, Kaituo |
author_sort | Li, Chenyang |
collection | NTU |
description | This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the power detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the power detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors' knowledge, it is the first power detector with input frequency compensation. The core of the power detector occupies an area of 0.014mm 2 and consumes 2.04mW static power. |
first_indexed | 2024-10-01T02:29:38Z |
format | Journal Article |
id | ntu-10356/144725 |
institution | Nanyang Technological University |
language | English |
last_indexed | 2024-10-01T02:29:38Z |
publishDate | 2020 |
record_format | dspace |
spelling | ntu-10356/1447252020-11-20T08:11:06Z Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS Li, Chenyang Boon, Chirn Chye Yi, Xiang Liang, Zhipeng Yang, Kaituo School of Electrical and Electronic Engineering VIRTUS, IC Design Centre of Excellence Engineering::Electrical and electronic engineering CMOS Power Detector Dynamic Range This work presents a compact switched-capacitor power detector (PD) with frequency compensation technique in a 65-nm CMOS process. Utilizing self-biased MOSFET as switches, the PD works both at the positive and the negative cycle to increase the dynamic range (DR). The output of traditional power detectors usually change with the variations of input frequencies which make the measurement of PD more difficult. In this design, by adding a feed-forward frequency detection circuit, the load resistors of the power detector are changed according to the input frequencies. Thus, the effect of input frequency variation is minimized. The measured operation frequency of the power detector is from 3 GHz to 5 GHz with a dynamic range of 20 dB with an error of ±2 dB. The variations of the output voltage are reduced from more than 4 dB to ±0.5 dB, achieving a variation of less than ±0.25 dB/GHz. To the authors' knowledge, it is the first power detector with input frequency compensation. The core of the power detector occupies an area of 0.014mm 2 and consumes 2.04mW static power. Published version 2020-11-20T08:11:06Z 2020-11-20T08:11:06Z 2020 Journal Article Li, C., Boon, C. C., Yi, X., Liang, Z., & Yang, K. (2020). Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS. IEEE Access, 8, 34197-34203. doi:10.1109/ACCESS.2020.2974514 2169-3536 https://hdl.handle.net/10356/144725 10.1109/ACCESS.2020.2974514 8 34197 34203 en IEEE Access © 2020 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/ application/pdf |
spellingShingle | Engineering::Electrical and electronic engineering CMOS Power Detector Dynamic Range Li, Chenyang Boon, Chirn Chye Yi, Xiang Liang, Zhipeng Yang, Kaituo Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title | Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title_full | Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title_fullStr | Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title_full_unstemmed | Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title_short | Compact switched-capacitor power detector with frequency compensation in 65-nm CMOS |
title_sort | compact switched capacitor power detector with frequency compensation in 65 nm cmos |
topic | Engineering::Electrical and electronic engineering CMOS Power Detector Dynamic Range |
url | https://hdl.handle.net/10356/144725 |
work_keys_str_mv | AT lichenyang compactswitchedcapacitorpowerdetectorwithfrequencycompensationin65nmcmos AT boonchirnchye compactswitchedcapacitorpowerdetectorwithfrequencycompensationin65nmcmos AT yixiang compactswitchedcapacitorpowerdetectorwithfrequencycompensationin65nmcmos AT liangzhipeng compactswitchedcapacitorpowerdetectorwithfrequencycompensationin65nmcmos AT yangkaituo compactswitchedcapacitorpowerdetectorwithfrequencycompensationin65nmcmos |