Novel solution for high-temperature dielectric application to encapsulate high-voltage power semiconductor devices
Traditional semiconductor packaging techniques and materials have been working well for conventional Si devices, which usually operate at temperatures up to 175 °C. As the operating temperature increases, these techniques exhibit failures such as bulk flows, volume shrinkage, brittleness and subsequ...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/144950 |